scholarly journals Coupling and Shielding Properties of the Baffle in ICP System

2011 ◽  
Vol 2011 ◽  
pp. 1-7
Author(s):  
Jozef Brcka ◽  
R. Lee Robison
Keyword(s):  
Magnetic Fields ◽  
Inductively Coupled Plasma ◽  
Physical Vapor Deposition ◽  
Three Dimensional ◽  
String Model ◽  
Inductively Coupled ◽  
Computational Evaluation ◽  
The Many ◽  
Ionized Physical Vapor Deposition ◽  
Slot Structure

This contribution is dealing with experimental and computational evaluation of the deposition baffle that is transparent to radio frequency (RF) magnetic fields generated by an external antenna in an inductively coupled plasma (ICP) source but opaque to the deposition of the metal onto a dielectric wall in ionized physical vapor deposition (IPVD) system. Various engineering aspects related to the deposition baffle are discussed. Among the many requirements focus is on specific structure of the slots and analysis to minimize deposition on the baffle (we used a string model for simulating the profile evolution) and deposition through the DB on dielectric components of the ICP source. Transparency of the baffle to RF magnetic fields is computed using a three-dimensional (3D) electromagnetic field solver. A simple two-dimensional sheath model is used to understand plasma interactions with the DB slot structure. Performance and possible failure of device are briefly discussed.

Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD

2015 ◽  
Vol 15 (10) ◽  
pp. 8099-8102 ◽  
Author(s):  
Chan-Hwa Hong ◽  
Jae-Heon Shin ◽  
Nae-Man Park ◽  
Kyung-Hyun Kim ◽  
Bo-Sul Kim ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Large Area ◽  
Inductively Coupled ◽  
Structural And Electrical Properties ◽  
Ito Thin Films ◽  
Enhanced Mobility ◽  
Ionized Physical Vapor Deposition ◽  
Ito Films

In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.

A REVERSIBLE OPTICAL SENSOR BASED ON CHITOSAN FILM FOR THE SELECTIVE DETECTION OF COPPER IONS

2012 ◽  
Vol 24 (05) ◽  
pp. 453-459 ◽  
Author(s):  
Shenhsiung Lin ◽  
Chia-Chen Chang ◽  
Chii-Wann Lin
Keyword(s):  
Functional Groups ◽  
Inductively Coupled Plasma ◽  
Copper Ions ◽  
Three Dimensional ◽  
Copper Ion ◽  
Chitosan Film ◽  
Detection Limits ◽  
Dimensional Structure ◽  
Optical Detectors ◽  
Inductively Coupled

Heavy metals greatly influence animal physiology, even at small doses. Among these metals, the copper ion is of great concern due to its effects on humans and wide applications in industry. Compared to atomic absorption spectroscopy and inductively coupled plasma-mass spectrometry, which destroy the samples that are analyzed, optical techniques do not decompose the analyte and have become a popular field of recent research. In this paper, we combined a novel optical detector that did not require sample-labeling, called surface plasmon resonance (SPR), with chitosan to detect copper ions by modifying the functional groups of chitosan through pH modification. Compared to other optical detectors, the SPR system was relatively fast and involved fewer experimental confounding factors. The three-dimensional structure of chitosan was used to obtain lower detection limits. Moreover, modification of the chitosan functional groups resulted in efficient regeneration by controlling the pH. A detection limit of 0.1 μM was obtained (linear range: 0.5–10 μM, R2 = 0.976), and the specificity was certified by comparing the copper ion with six other ions. Additionally, we successfully regenerated the SPR chips by modifying the functional groups. In conclusion, the chitosan–SPR system detected copper ions with improved detection limits using a quick and simple regeneration method.

scholarly journals Hygroexpansion and Surface Roughness Cause Defects and Increase the Electrical Resistivity of Physical Vapor Deposited Aluminum Coatings on Paper

Coatings ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 33 ◽  
Author(s):  
Martina Lindner ◽  
Julia Heider ◽  
Matthias Reinelt ◽  
Horst-Christian Langowski
Keyword(s):  
Surface Roughness ◽  
Relative Humidity ◽  
Moisture Content ◽  
Inductively Coupled Plasma ◽  
Physical Vapor Deposition ◽  
Eddy Currents ◽  
Unit Area ◽  
Substrate Roughness ◽  
Aluminum Coatings ◽  
Inductively Coupled

Aluminum coatings, which are applied by physical vapor deposition (PVD), have to be virtually defect-free in barrier applications for the packaging industry. When aluminum is applied to paper, hygroexpansion and substrate roughness can impair the aluminum coating. Neither effect is easy to detect by microscopy, but both can manifest as an increase in electrical resistance. Here, we quantified the effect of substrate paper hygroexpansion and surface roughness on the effective resistivity ρEFF of aluminum coatings. The sheet resistance of aluminum coated onto four different rough paper surfaces was measured via eddy currents at different relative humidity (0%–95%). The mass of aluminum per unit area was determined by inductively-coupled plasma mass spectrometry (ICP–MS). We calculated ρEFF based on the measured resistance and aluminum mass per unit area, combined with a value for aluminum density from the literature. The substrate roughness was proportional to ρEFF. Relative humidity correlated with the moisture content of the paper substrate according to the Guggenheim, Anderson, and De Boer (GAB) equation, whereas the moisture content showed a linear correlation with hygroexpansion. At relative humidity of up to 50%, hygroexpansion was linearly correlated with the increase in ρEFF, which is related to the mechanical straining and deformation of aluminum. At higher humidity, aluminum started to crack first on rough substrates and later on smooth substrates. The increase in ρEFF was larger on rough substrates. The findings highlight the need for information about substrate roughness, humidity, and hygroexpansion when eddy current measurement results are compared, and will help to ensure that aluminum coatings, applied by PVD, are defect-free.

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

2007 ◽  
Author(s):  
Jia Cheng ◽  
Yu Zhu ◽  
Guanghong Duan ◽  
Yangying Chen
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Three Dimensional ◽  
Argon Plasma ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Parameters Selection ◽  
Dimensional Distribution ◽  
Discharge Model ◽  
Discharge Simulation

Based on the commercial software, CFD-ACE+, a three-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature and the electron number density (END) of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distribution profiles of the plasma parameters above the wafer’s surface at different pressures and powers were compared. These results demonstrate that the END increases with both pressure and power. And the electron temperature decreases with pressure. The methods and conclusions can be used to provide some reference for the configurations of the chamber and the coil of the ICP equipment design and improvement and process parameters selection.

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