Electrical characterization of magnesium implanted gallium nitride

2002 ◽  
Vol 91 (1) ◽  
pp. 178 ◽  
Author(s):  
A. Krtschil ◽  
A. Kielburg ◽  
H. Witte ◽  
J. Christen ◽  
A. Krost ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electrical Characterization

Microstructural and electrical characterization of Er and Eu implanted gallium nitride

2003 ◽  
Vol 105 (1-3) ◽  
pp. 122-125 ◽  
Author(s):  
T. Wojtowicz ◽  
Vasco Matias ◽  
P. Marie ◽  
M. Mamor ◽  
B. Pipeleers ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electrical Characterization

Electrical Characterization of Gallium Nitride Thin Films Synthesized By Electrochemical Deposition

2020 ◽  
Vol MA2020-02 (26) ◽  
pp. 1826-1826
Author(s):  
Abdulraoof Idriss Ahmed Ali ◽  
Jacqueline Nel ◽  
Walter Meyer
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Electrochemical Deposition ◽  
Electrical Characterization

Light Emitting Diode Growth on Curved Gallium Nitride Surfaces

2011 ◽  
Vol 1288 ◽  
Author(s):  
L. E. Rodak ◽  
K. Lee ◽  
V. Kumbham ◽  
V. Narang ◽  
L. A. Hornak ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Light Emitting Diode ◽  
Three Dimensional ◽  
Electrical Characterization ◽  
Emission Pattern ◽  
Light Emitting ◽  
Emission Profile ◽  
Planar Structures ◽  
Visible Wavelengths

ABSTRACTIII-Nitride based Light Emitting Diodes (LEDs) are heavily pursued for various lighting applications due to the ability to engineer the emission through the visible wavelengths by controlling the alloy composition in the multi quantum well. Planar structures are characterized by a Lambertian emission pattern, however, depending on the applications in which the LED is employed, including but not limited to, general lighting, displays, and sensors, the emission profile may need to be more or less directional. As a result, there is significant interest in both improving the efficiency and controlling the emission profile of nitride based devices. Various components such as lenses and photonic crystals are used to improve light extraction and alter the emission profile while growth on semi-polar substrates is being pursued to minimize inherent polarization effects. In this work, curved Gallium Nitride (GaN) structures have been grown utilizing growth kinetics. These as-grown features do not require the extensive additional fabrication and allow for three-dimensional substrates to be employed for LED fabrication. The details of the fabrication and the optical and electrical characterization of Indium Gallium Nitride based LEDs grown on these structures is discussed.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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