Cathodoluminescence Studies of InGaN Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
F. A. Ponce ◽  
S. A. Galloway ◽  
W. Goetz ◽  
R. S. Kern
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Light Emission ◽  
Narrow Band ◽  
Photoluminescence Spectra ◽  
Single Quantum ◽  
Band Pass ◽  
Ingan Quantum Wells

AbstractLow temperature cathodoluminescence has been used to investigate the spatial characteristics of light emission in InxGa1−xN single quantum wells. High spatial resolution, narrow band pass imaging shows the luminescence to be strongly inhomogeneous in wavelength as well as in intensity on a sub-micron scale. Cathodoluminescence spectra correlate favorably with photoluminescence spectra. However, when spectra are recorded from different areas in spot mode, the quantum emission varies significantly in wavelength. The observed variations are consistent with composition inhomogeneities in the quantum well.

scholarly journals High spatial resolution picosecond cathodoluminescence of InGaN quantum wells

2006 ◽  
Vol 89 (23) ◽  
pp. 232109 ◽  
Author(s):  
S. Sonderegger ◽  
E. Feltin ◽  
M. Merano ◽  
A. Crottini ◽  
J. F. Carlin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Ingan Quantum Wells

Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

2005 ◽  
Vol 87 (13) ◽  
pp. 131911 ◽  
Author(s):  
S. Srinivasan ◽  
M. Stevens ◽  
F. A. Ponce ◽  
T. Mukai
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Polychromatic Light ◽  
Ingan Quantum Wells

Electroluminescence from GalnN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes

2004 ◽  
Vol 831 ◽  
Author(s):  
Barbara Neubert ◽  
Frank Habel ◽  
Peter Bruckner ◽  
Ferdinand Scholz ◽  
Till Riemann ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Low Pressure ◽  
Lower Efficiency ◽  
Strong Light ◽  
The Common ◽  
Piezo Electric

ABSTRACTNon (0001) GalnN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1–100) compared to (11–20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.

Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 1305-1308
Author(s):  
Masanobu Yoshikawa ◽  
Masataka Murakami ◽  
Takaya Fujita ◽  
K. Inoue ◽  
K. Matsuda ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Spectral Variation ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Cathodoluminescence Spectroscopy

We have measured cathodoluminescence (CL) spectra in the vicinity of V-defects in InGaN single-quantum-well(SQW) films at nanometer level, using newly developed CL apparatus (SE-SEM-CL). From spectroscopic CL measurement, it has been found that the spectra change dramatically in the vicinity of V-defects in the region of £50nm. The SE-SEM-CL has a potential to detect the CL spectral variation at spatial resolution with £50nm.

Investigation of Roughness at InP/InAs Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Growth Temperature ◽  
Interface Roughness ◽  
Chemical Beam Epitaxy ◽  
Photoluminescence Spectra ◽  
Multiple Line ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

Light Emission from InGaN Quantum Wells Grown on the Facets of Closely Spaced GaN Nano-Pyramids Formed by Nano-Imprinting

2009 ◽  
Vol 2 (12) ◽  
pp. 121002 ◽  
Author(s):  
Chaowang Liu ◽  
Alexander Šatka ◽  
Lethy Krishnan Jagadamma ◽  
Paul R. Edwards ◽  
Duncan Allsopp ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Ingan Quantum Wells

Modulated beam epitaxial growth of high quality GaAs single quantum wells at low temperature

1991 ◽  
Vol 59 (7) ◽  
pp. 820-822 ◽  
Author(s):  
K. F. Longenbach ◽  
S. Xin ◽  
C. Schwartz ◽  
Y. Jiang ◽  
W. I. Wang
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Single Quantum ◽  
High Quality
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