scholarly journals Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays

2010 ◽  
Vol 18 (20) ◽  
pp. 21322 ◽  
Author(s):  
John Henson ◽  
Emmanouil Dimakis ◽  
Jeff DiMaria ◽  
Rui Li ◽  
Salvatore Minissale ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Silver Nanoparticle ◽  
Light Emission ◽  
Green Light ◽  
Nanoparticle Arrays ◽  
Green Light Emission ◽  
Ingan Quantum Wells

Origins of efficient green light emission in phase-separated InGaN quantum wells

2006 ◽  
Vol 17 (15) ◽  
pp. 3734-3739 ◽  
Author(s):  
Yen-Lin Lai ◽  
Chuan-Pu Liu ◽  
Yung-Hsiang Lin ◽  
Tao-Hung Hsueh ◽  
Ray-Ming Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission ◽  
Ingan Quantum Wells

Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells

2007 ◽  
Vol 90 (7) ◽  
pp. 071903 ◽  
Author(s):  
Shunfeng Li ◽  
Jörg Schörmann ◽  
Donat J. As ◽  
Klaus Lischka
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission

Plasmon-Enhanced Near-Green Light Emission from InGaN/GaN Quantum Wells

2019 ◽  
Vol 41 (6) ◽  
pp. 73-79
Author(s):  
Roberto Paiella ◽  
John Henson ◽  
Jeff DiMaria ◽  
Emmanouil Dimakis ◽  
Rui Li ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission

Plasmon-Enhanced Emission Rates from III-Nitride Quantum Wells Using Tunable Surface Plasmons

2011 ◽  
Vol 1294 ◽  
Author(s):  
J. Henson ◽  
J. DiMaria ◽  
E. Dimakis ◽  
R. Li ◽  
S. Minissale ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Internal Quantum Efficiency ◽  
Strong Dependence ◽  
Substantial Reduction ◽  
Green Light ◽  
Photoluminescence Intensity ◽  
Emission Rates ◽  
Recombination Lifetime ◽  
Green Light Emission

ABSTRACTTwo-dimensional arrays of silver nanocylinders fabricated by electron-beam lithography are used to demonstrate plasmon-enhanced near-green light emission from nitride semiconductor quantum wells. Large enhancements in peak photoluminescence intensity (up to a factor of over 3) are obtained, accompanied by a substantial reduction in recombination lifetime indicative of increased internal quantum efficiency. The measured enhancement factors exhibit a strong dependence on the nanoparticle dimensions, underscoring the importance of geometrical tuning for this application.

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

2008 ◽  
Vol 104 (10) ◽  
pp. 103530 ◽  
Author(s):  
W. Feng ◽  
V. V. Kuryatkov ◽  
A. Chandolu ◽  
D. Y. Song ◽  
M. Pandikunta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Green Light Emission

High-efficiency circularly polarized green light emission from GaN-based laser diodes integrated with GaN metasurface quarterwave plate

2021 ◽  
Vol 119 (24) ◽  
pp. 241103
Author(s):  
Miao Wang ◽  
Yu Lin ◽  
Jue-Min Yi ◽  
De-Yao Li ◽  
Jian-Ping Liu ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emission ◽  
Laser Diodes ◽  
Green Light ◽  
Circularly Polarized ◽  
Green Light Emission
Sign in / Sign up

Export Citation Format

Share Document