scholarly journals Bulk stress due to surface damage of crystalline silicon and germanium

2001 ◽  
Vol 79 (21) ◽  
pp. 3458-3460 ◽  
Author(s):  
P. Fisher ◽  
R. E. M. Vickers
Keyword(s):  
Crystalline Silicon ◽  
Surface Damage ◽  
Bulk Stress ◽  
Silicon And Germanium

Bulk Homogeneous Uniaxial Stress Arising from Surface Damage of Crystalline Silicon and Germanium

2003 ◽  
Vol 10 (02n03) ◽  
pp. 277-282 ◽  
Author(s):  
P. Fisher ◽  
R. E. M. Vickers ◽  
D. C. Lau
Keyword(s):  
Internal Stress ◽  
Crystalline Silicon ◽  
Uniaxial Stress ◽  
Surface Damage ◽  
Absorption Lines ◽  
Bulk Stress ◽  
Shallow Impurities ◽  
Silicon And Germanium

Abrasion of two opposing surfaces of either crystalline Si or Ge produces a compressive, homogeneous, uniaxial stress extending throughout the bulk perpendicular to the surfaces. This is concluded by analyzing the splittings, intensities, and polarizations of the sharp Lyman absorption lines of bulk shallow impurities in the abraded materials. This effect so far has been observed for samples of thickness, t, from 0.4 to 5 mm for Si ground with water slurries of SiC or alumina with optical faces coplanar with {100} and {111} planes while {100}, {110}, {111}, and {112} planes of Ge have been abraded with SiC in water and examined over the range 0.8 ≤ t ≤ 3.0 mm. For both materials, the internal stress is found to be inversely proportional to t. Controlled etching indicates the damaged layers producing the bulk stress to be < 0.5 μm thick.

Hydrogen in Crystalline Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Low Temperatures ◽  
Atomic Hydrogen ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Surface Damage ◽  
Defect Complexes ◽  
Microscopic Models ◽  
Related Defect ◽  
Shallow Acceptors ◽  
Technological Interest

ABSTRACTThe ability of hydrogen to migrate in crystalline Si at low temperatures (<400°C) and bond to a variety of both shallow and deep level impurities, passivating their electrical activity, is of fundamental and technological interest. Recent results on the deactivation of the shallow acceptors in Si are compared with similar experiments in other semiconductors, microscopic models are proposed, and the implications for the states of hydrogen in the Si lattice at a variety of temperatures, and the diffusivity of some of these different states, is discussed. New results on the migration of atomic hydrogen under electronic stimulation are also detailed, along with a compendium of the deep levels in Si passivated by reaction with hydrogen. Surface damage by hydrogen-containing plasmas, and the infrared and electrical properties of H-related defect complexes are also reviewed.

Giant pop-ins in nanoindented silicon and germanium caused by lateral cracking

2008 ◽  
Vol 23 (2) ◽  
pp. 297-301 ◽  
Author(s):  
D.J. Oliver ◽  
B.R. Lawn ◽  
R.F. Cook ◽  
M.G. Reitsma ◽  
J.E. Bradby ◽  
...  
Keyword(s):  
Contact Zone ◽  
Material Removal ◽  
Microelectromechanical Systems ◽  
Crystalline Silicon ◽  
Brittle Materials ◽  
Indentation Load ◽  
High Load ◽  
Silicon And Germanium

Giant “pop-in” displacements are observed in crystalline silicon and germanium during high-load nanoindentation with a spherical diamond tip. These events are consistent with material removal triggered by lateral cracking during loading, which poses a hazard to microelectromechanical systems (MEMS) operation. We examine the scaling of the pop-in displacements as a function of peak indentation load and demonstrate a correlation with the depth of the plastic contact zone. We argue that giant pop-ins may occur in a broad range of highly brittle materials.

scholarly journals Novel three-body nano-abrasive wear mechanism

Friction ◽  
2021 ◽  
Author(s):  
Ruling Chen ◽  
Shaoxian Li
Keyword(s):  
Abrasive Wear ◽  
Material Removal ◽  
Crystalline Silicon ◽  
Surface Damage ◽  
Mating Surface ◽  
Dynamics Simulations ◽  
New Research ◽  
Three Body ◽  
The Relationship ◽  
Material Wear

AbstractCurrent three-body abrasive wear theories are based on a macroscale abrasive indentation process, and these theories claim that material wear cannot be achieved without damaging the hard mating surface. In this study, the process of three-body nano-abrasive wear of a system including a single crystalline silicon substrate, an amorphous silica cluster, and a polyurethane pad, based on a chemical mechanical polishing (CMP) process, is investigated via molecular dynamics simulations. The cluster slid in a suspended state in smooth regions and underwent rolling impact in the asperity regions of the silicon surface, realizing non-damaging monoatomic material removal. This proves that indentation-plowing is not necessary when performing CMP material removal. Therefore, a non-indentation rolling-sliding adhesion theory for three-body nano-abrasive wear between ultrasoft/hard mating surfaces is proposed. This wear theory not only unifies current mainstream CMP material removal theories, but also clarifies that monoatomic material wear without damage can be realized when the indentation depth is less than zero, thereby perfecting the relationship between material wear and surface damage. These results provide new understanding regarding the CMP microscopic material removal mechanism as well as new research avenues for three-body abrasive wear theory at the monoatomic scale.

scholarly journals RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Siming Chen ◽  
Luping Tao ◽  
Libin Zeng ◽  
Ruijiang Hong
Keyword(s):  
Oxide Film ◽  
Magnetron Sputtering ◽  
Aluminum Oxide ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Damage ◽  
Rf Magnetron Sputtering ◽  
High Energy ◽  
Silicon Wafers ◽  
Aluminum Oxide Film

Aluminum oxide films were deposited on crystalline silicon substrates by reactive RF magnetron sputtering. The influences of the deposition parameters on the surface passivation, surface damage, optical properties, and composition of the films have been investigated. It is found that proper sputtering power and uniform magnetic field reduced the surface damage from the high-energy ion bombardment to the silicon wafers during the process and consequently decreased the interface trap density, resulting in the good surface passivation; relatively high refractive index of aluminum oxide film is benefic to improve the surface passivation. The negative-charged aluminum oxide film was then successfully prepared. The surface passivation performance was further improved after postannealing by formation of an SiOxinterfacial layer. It is demonstrated that the reactive sputtering is an effective technique of fabricating aluminum oxide surface passivation film for low-cost high-efficiency crystalline silicon solar cells.

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