scholarly journals RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Siming Chen ◽  
Luping Tao ◽  
Libin Zeng ◽  
Ruijiang Hong
Keyword(s):  
Oxide Film ◽  
Magnetron Sputtering ◽  
Aluminum Oxide ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Damage ◽  
Rf Magnetron Sputtering ◽  
High Energy ◽  
Silicon Wafers ◽  
Aluminum Oxide Film

Aluminum oxide films were deposited on crystalline silicon substrates by reactive RF magnetron sputtering. The influences of the deposition parameters on the surface passivation, surface damage, optical properties, and composition of the films have been investigated. It is found that proper sputtering power and uniform magnetic field reduced the surface damage from the high-energy ion bombardment to the silicon wafers during the process and consequently decreased the interface trap density, resulting in the good surface passivation; relatively high refractive index of aluminum oxide film is benefic to improve the surface passivation. The negative-charged aluminum oxide film was then successfully prepared. The surface passivation performance was further improved after postannealing by formation of an SiOxinterfacial layer. It is demonstrated that the reactive sputtering is an effective technique of fabricating aluminum oxide surface passivation film for low-cost high-efficiency crystalline silicon solar cells.

Surface Passivation of Crystalline Silicon by a-Si:H Thin Films

2014 ◽  
Vol 936 ◽  
pp. 603-606
Author(s):  
Yin Wang ◽  
Wei Li ◽  
An Ran Guo ◽  
Feng Yu ◽  
Jian He ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Rf Magnetron Sputtering ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow

Surface passivation of c-Si by a-Si:H thin films has been studied. In this paper, the minority carrier lifetime of 345μs (from 85μs) is obtained at optimal hydrogen flow rate (8.0sccm) by using RF-magnetron sputtering method.

Fabrication of Anodic Aluminum Oxide Film on Large-Area Glass Substrate

2007 ◽  
Vol 10 (12) ◽  
pp. C69 ◽  
Author(s):  
Ching-Jung Yang ◽  
Shih-Wei Liang ◽  
Pu-Wei Wu ◽  
Chih Chen ◽  
Jia-Min Shieh
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Glass Substrate ◽  
Anodic Aluminum Oxide ◽  
Large Area ◽  
Anodic Aluminum Oxide Film ◽  
Aluminum Oxide Film ◽  
Anodic Aluminum

Strength and Adhesion of Thin Aluminum Oxide Film Deposited on Iron Surface

1993 ◽  
Vol 115 (4) ◽  
pp. 615-619 ◽  
Author(s):  
M. Nakanishi ◽  
H. Okuya ◽  
K. Nakajima
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Substrate Surface ◽  
Iron Surface ◽  
Indentation Hardness ◽  
Aluminum Oxide Film ◽  
Thin Aluminum ◽  
Atomic Mixing ◽  
Scratch Tests ◽  
Sputter Etching

The strength of deposited film and the adhesion between the film and the substrate were investigated with deposited aluminum oxide film on iron surface by scratching the surface with a diamond cone. Two types of samples were examined, one with oxide film deposited after cleaning the substrate surface by sputter etching, the other with the film deposited without any sputter etching. It was found that a law similar to Meyers’ for indentation hardness holds between the load and scratch width on the sample examined. These results suggest that by analyzing the scratch data the adhesion strength of the film to the substrate can be estimated together with the hardness of the film itself. Analyses by EPMA (electron probe X-ray microanalyzer) and AES (Auger electron spectroscopy) were conducted to correlate the results obtained by the scratch tests and friction experiments, and it was confirmed that (i) adhesion is improved by sputter etching prior to the deposition of the film; (ii) adhesion decreases considerably due to the progress of oxidation in the vicinity of the interface, which depends markedly on the oxygen concentration in the oxide film; and (iii) there is an optimum thickness of the three-component layer (Fe, Al, and O) formed by atomic mixing at the interface for maximizing the adhesion.

Structure of the Ultrathin Aluminum Oxide Film on NiAl(110)

Science ◽  
2005 ◽  
Vol 308 (5727) ◽  
pp. 1440-1442 ◽  
Author(s):  
G. Kresse
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Aluminum Oxide Film

Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

2007 ◽  
Vol 1035 ◽  
Author(s):  
Seol Hee Choi ◽  
Chan Hyoung Kang
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Silicon Wafers ◽  
Center Frequency ◽  
High Resistivity ◽  
Chemical Vapor Deposition Method ◽  
Zno Films ◽  
Optimum Process ◽  
Optimum Conditions ◽  
Saw Devices

AbstractHighly c-axis oriented, dense, and fine-grained polycrystalline ZnO films with smooth surface and high resistivity were deposited on 4 inch silicon wafers by employing ZnO targets in a radio-frequency (RF) magnetron sputtering system. By changing applied RF power, substrate temperature and O2/Ar gas ratio, the optimum process parameters were found to be 150 W, 200 °C and 30/70, respectively. Applying the ZnO films deposited under these optimum conditions, surface acoustic wave (SAW) devices of ZnO/IDT/SiO2/Si structure were fabricated by conventional photolithography and etching processes. The interdigital transducers (IDT), made of the aluminum deposited by DC magnetron sputter, were patterned as 2.5/2.5 μm of finger width/spacing. Another type of SAW filter of IDT/ZnO/diamond/Si structure was fabricated. In this structure, high-quality nanocrystalline diamond (NCD) films were deposited on 4 inch silicon wafers by direct current (DC) plasma assisted chemical vapor deposition method using H2-CH4 mixture as precursor gas. On the top of the diamond films, ZnO films were deposited under the optimum conditions. The aluminum IDT pattern was fabricated on the ZnO/diamond layered films. The characteristics of the fabricated SAW devices were evaluated in terms of center frequency, insertion loss, and wave propagation velocity.

Micro-capacitor with vertically grown silver nanowires and bismuth ferric oxide composite structures on silicon substrates

2016 ◽  
Vol 51 (7) ◽  
pp. 965-969 ◽  
Author(s):  
Daniel Choi ◽  
Boo Hyun An ◽  
Mariam Mansouri ◽  
Dima Ali ◽  
Malathe Khalil ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxide Film ◽  
Aluminum Oxide ◽  
Ferric Oxide ◽  
Silver Nanowires ◽  
Silicon Substrates ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Oxide Composite ◽  
Aluminum Oxide Film

We have designed and demonstrated a complementary metal-oxide-semiconductor compatible process for fabricating high capacitance micro-capacitors based on vertically grown silver nanowires on silicon substrates. Array of silver nanowires with high-aspect ratio were electrochemically grown in the pores of anodized aluminum oxide film, which was pre-formed through anodization of aluminum thin film deposited on titanium/silicon oxide/silicon substrates. High dielectric bismuth ferric oxide layer was electrodeposited to fill the gap between silver nanowires after anodized aluminum oxide film was removed. It was found that the micro-capacitor based on the silver nanowires/bismuth ferric oxide composite film possessed higher capacitance by approximately one order of magnitude from the COMSOL simulation results from the flat Ag thin-film capacitor and the silver nanowire capacitor.

Facile fabrication and optical characterization of nanoflake aluminum oxide film with high broadband and omnidirectional transmittance enhancement

2020 ◽  
pp. 110567
Author(s):  
T. Lertvanithphol ◽  
P. Limnonthakul ◽  
C. Hom-on ◽  
P. Jaroenapibal ◽  
C. Chananonnawathorn ◽  
...  
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Optical Characterization ◽  
Aluminum Oxide Film ◽  
Facile Fabrication
Sign in / Sign up

Export Citation Format

Share Document