Time‐dependent study of low energy electron beam irradiation of Mg‐doped GaN grown by metalorganic chemical vapor deposition

1996 ◽  
Vol 69 (11) ◽  
pp. 1605-1607 ◽  
Author(s):  
X. Li ◽  
J. J. Coleman
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Electron Beam Irradiation ◽  
Chemical Vapor ◽  
Low Energy ◽  
Time Dependent ◽  
Beam Irradiation ◽  
Low Energy Electron ◽  
Metalorganic Chemical ◽  
Mg Doped

Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

2002 ◽  
Vol 744 ◽  
Author(s):  
O. Gelhausen ◽  
M. R. Phillips ◽  
H. N. Klein ◽  
E. M. Goldys
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Hydrogen Atoms ◽  
Acceptor Pair ◽  
Low Energy Electron ◽  
The Impact ◽  
Mg Doped

ABSTRACTCL spectroscopy studies at varying temperatures and excitation power densities as well as depth-resolved CL imaging were conducted to investigate the impact of low energy electron beam irradiation (LEEBI) on native defects and residual impurities in metal-organic vapor phase epitaxy (MOVPE) grown Mg-doped p-type GaN. Due to the dissociation of (Mg-H)0 complexes, LEEBI significantly increases the (e,Mg0) emission (3.26 eV) at 300 K and substantially decreases the H-Mg donor-acceptor-pair (DAP) emission (3.27 eV) at 80 K. In-plane and depth-resolved CL imaging indicates that hydrogen dissociation results from electron-hole recombination at H-defect complexes rather than heating by the electron beam. The dissociated hydrogen atoms associate with nitrogen vacancies, forming a deeper donor, i.e. a (H-VN) complex. The corresponding deeper DAP emission with Mg centered at 3.1 eV is clearly observed between 160 and 220 K. Moreover, a broad yellow luminescence (YL) band centered at 2.2 eV is observed in MOVPE-grown Mg-doped GaN after LEEBI-treatment. It is suggested that a combination of LEEBI-induced Fermi-level downshift due to Mg-acceptor activation and simultaneous dissociation of gallium vacancy-impurity complexes, i.e. (VGa-H), is responsible for the observed YL.

Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 631-634 ◽  
Author(s):  
Doo-Hyeb Youn ◽  
Mohamed Lachab ◽  
Maosheng Hao ◽  
Tomoya Sugahara ◽  
Hironori Takenaka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Activation Mechanism ◽  
P Type ◽  
Metalorganic Chemical ◽  
Mg Doped

Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition

2000 ◽  
Vol 76 (9) ◽  
pp. 1149-1151 ◽  
Author(s):  
K. S. Kim ◽  
M. G. Cheong ◽  
C.-H. Hong ◽  
G. M. Yang ◽  
K. Y. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Hole Transport ◽  
Metalorganic Chemical ◽  
Mg Doped

Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition

2000 ◽  
Vol 44 (9) ◽  
pp. 1669-1677 ◽  
Author(s):  
M Lachab ◽  
D.-H Youn ◽  
R.S Qhalid Fareed ◽  
T Wang ◽  
S Sakai
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical ◽  
Mg Doped

Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

2002 ◽  
Vol 81 (20) ◽  
pp. 3747-3749 ◽  
Author(s):  
O. Gelhausen ◽  
H. N. Klein ◽  
M. R. Phillips ◽  
E. M. Goldys
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Low Energy Electron ◽  
Mg Doped

Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin films

2000 ◽  
Vol 639 ◽  
Author(s):  
J. Chen ◽  
Q. Zhou ◽  
Y. Berhane ◽  
M. O. Manasreh ◽  
C. A. Tran ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Vibrational Modes ◽  
Spectroscopy Technique ◽  
Defect Complexes ◽  
Localized Vibrational Modes ◽  
Metalorganic Chemical ◽  
Mg Doped

ABSTRACTLocalized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform infrared spectroscopy technique. Three distinctive localized vibrational modes were observed around 2850, 2922, and 2959 cm−1 for undoped, Si- and Mg-doped samples. These peaks are related to CH, CH2, and CH3 defect complexes, respectively. It is also observed that the frequencies and intensities of the localized vibrational modes are sample dependent.

Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition

1996 ◽  
Vol 68 (5) ◽  
pp. 667-669 ◽  
Author(s):  
W. Götz ◽  
N. M. Johnson ◽  
J. Walker ◽  
D. P. Bour ◽  
R. A. Street
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical ◽  
Mg Doped
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