Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions

2001 ◽  
Vol 78 (21) ◽  
pp. 3265-3267 ◽  
Author(s):  
Seong-Ran Jeon ◽  
Young-Ho Song ◽  
Ho-Jin Jang ◽  
Gye Mo Yang ◽  
Soon Won Hwang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting ◽  
Tunnel Contact ◽  
Lateral Current

Enhanced characteristics of blue InGaN∕GaN light-emitting diodes by using selective activation to modulate the lateral current spreading length

2008 ◽  
Vol 92 (26) ◽  
pp. 261105 ◽  
Author(s):  
Ray-Ming Lin ◽  
Yuan-Chieh Lu ◽  
Yi-Lun Chou ◽  
Guo-Hsing Chen ◽  
Yung-Hsiang Lin ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Selective Activation ◽  
Current Spreading ◽  
Light Emitting ◽  
Lateral Current

scholarly journals Promoted Hole Transport Capability by Improving Lateral Current Spreading for High‐Efficiency Quantum Dot Light‐Emitting Diodes

2020 ◽  
Vol 7 (23) ◽  
pp. 2001760
Author(s):  
Qianqian Wu ◽  
Fan Cao ◽  
Haoran Wang ◽  
Jianquan Kou ◽  
Zi‐Hui Zhang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Current Spreading ◽  
Light Emitting ◽  
Lateral Current

Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs)on Ge/SiGe/Si Substrates

2003 ◽  
Vol 799 ◽  
Author(s):  
O. Kwon ◽  
J. Boeckl ◽  
M. L. Lee ◽  
A. J. Pitera ◽  
E. A. Fitzgerald ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Resonant Cavity ◽  
Optical Power ◽  
Device Structure ◽  
Current Spreading ◽  
Light Emitting ◽  
Si Substrates ◽  
Low Dislocation Density ◽  
Optical Output ◽  
Lateral Current

ABSTRACTAlGaInP visible resonant cavity light emitting diodes (RCLEDs) were grown and fabricated on low-dislocation density, SiGe/Si metamorphic substrates by molecular beam epitaxy. A comparison with devices grown on GaAs and Ge substrates showed that not only did the RCLED device structure successfully transfer to the SiGe substrate, but also a higher optical output power was obtained. This is a result of a high thermal conductivity and an enhanced lateral current spreading. In addition, the growth of an AlGaAs current spreading layer and a modified top metal contact were incorporated to the SiGe RCLED to improve the device performance. With these improvements, a 410μm × 410μm device was fabricated with an optical power of 166μW at 665nm peak wavelength under 500mA current injection and an extremely narrow full width half maximum (FWHM) value of 3.63nm for electroluminescent emission under 50mA injection current.

Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes

2013 ◽  
Vol 9 (4) ◽  
pp. 266-271 ◽  
Author(s):  
Shanjin Huang ◽  
Bingfeng Fan ◽  
Zimin Chen ◽  
Zhiyuan Zheng ◽  
Hongtai Luo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Spreading Effect ◽  
Current Spreading ◽  
Light Emitting ◽  
Lateral Current

Device and circuit modeling of GaN/InGaN light emitting diodes (LEDs) for optimum current spreading

2003 ◽  
Vol 47 (10) ◽  
pp. 1817-1823 ◽  
Author(s):  
A. Ebong ◽  
S. Arthur ◽  
E. Downey ◽  
X.A. Cao ◽  
S. LeBoeuf ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Circuit Modeling ◽  
Current Spreading ◽  
Light Emitting

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

Buried Tunnel Contact Junctions in GaN-Based Light-Emitting Diodes

2001 ◽  
Vol 188 (1) ◽  
pp. 167-170 ◽  
Author(s):  
S.-R. Jeon ◽  
Y.H. Song ◽  
H.J. Jang ◽  
K.S. Kim ◽  
G.M. Yang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Tunnel Contact

Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side

2014 ◽  
Vol 11 (3-4) ◽  
pp. 817-820
Author(s):  
Thorsten Passow ◽  
Michael Kunzer ◽  
Paul Börner ◽  
Wilfried Pletschen ◽  
Klaus Köhler ◽  
...  
Keyword(s):  
Current Distribution ◽  
Light Emitting Diodes ◽  
Resonant Cavity ◽  
Current Injection ◽  
Light Emitting ◽  
Lateral Current
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