scholarly journals Promoted Hole Transport Capability by Improving Lateral Current Spreading for High‐Efficiency Quantum Dot Light‐Emitting Diodes

2020 ◽  
Vol 7 (23) ◽  
pp. 2001760
Author(s):  
Qianqian Wu ◽  
Fan Cao ◽  
Haoran Wang ◽  
Jianquan Kou ◽  
Zi‐Hui Zhang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Current Spreading ◽  
Light Emitting ◽  
Lateral Current

Graphene Oxide Inserted Poly(N -Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High-Efficiency Quantum-Dot Light-Emitting Diodes

2017 ◽  
Vol 4 (15) ◽  
pp. 1700476 ◽  
Author(s):  
Young Ran Park ◽  
Kyoung Soon Choi ◽  
Jong Chan Kim ◽  
Young Soo Seo ◽  
Soo Young Kim ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Quantum Dot ◽  
Vanadium Oxide ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Light Emitting

scholarly journals High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Wei-Chih Chao ◽  
Tzu-Hsuan Chiang ◽  
Yi-Chun Liu ◽  
Zhi-Xuan Huang ◽  
Chia-Chun Liao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Hole Mobility ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
A Current

AbstractThe industrialization of quantum dot light-emitting diodes (QLEDs) requires the use of less hazardous cadmium-free quantum dots, among which ZnSe-based blue and InP-based green and red quantum dots have received considerable attention. In comparison, the development of InP-based green QLEDs is lagging behind. Here, we prepare green InP/ZnSe/ZnS quantum dots with a diameter of 8.6 nm. We then modify the InP quantum dot emitting layer by passivation with various alkyl diamines and zinc halides, which decreases electron mobility and enhances hole transport. This, together with optimizing the electron transport layer, leads to green 545 nm InP QLEDs with a maximum quantum efficiency (EQE) of 16.3% and a current efficiency 57.5 cd/A. EQE approaches the theoretical limit of InP quantum dots, with an emission quantum yield of 86%.

High efficiency quantum dot light emitting diodes from positive aging

Nanoscale ◽  
2017 ◽  
Vol 9 (38) ◽  
pp. 14451-14457 ◽  
Author(s):  
Krishna P. Acharya ◽  
Alexandre Titov ◽  
Jake Hyvonen ◽  
Chenggong Wang ◽  
Jean Tokarz ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Positive Aging ◽  
Polymer Hybrid ◽  
Colloidal Quantum Dot

Colloidal quantum dot-polymer hybrid light emitting diodes (QLEDs) that exhibit external quantum efficiencies >12% for all three primary colors (21% from green) have been demonstrated.

scholarly journals Solution-processed double-layered hole transport layers for highly-efficient cadmium-free quantum-dot light-emitting diodes

2020 ◽  
Vol 28 (5) ◽  
pp. 6134 ◽  
Author(s):  
Fei Chen ◽  
Li-Jin Wang ◽  
Xu Li ◽  
Zhen-Bo Deng ◽  
Feng Teng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Solution Processed ◽  
Light Emitting ◽  
Highly Efficient ◽  
Hole Transport Layers

Enhanced hole transport by doping of a lewis acid to Poly(9-vinylcarbazole) for high efficient quantum dot light-emitting diodes

2020 ◽  
Vol 85 ◽  
pp. 105875 ◽  
Author(s):  
Min Yang ◽  
Qin Zhang ◽  
Wenjing Zhang ◽  
Zhongqi Hao ◽  
Yuancheng Qin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Lewis Acid ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Light Emitting ◽  
High Efficient
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