Theoretical Considerations on Current Spreading in GaN-Based Light Emitting Diodes Fabricated with Top-Emission Geometry

2010 ◽  
Vol 157 (5) ◽  
pp. H562 ◽  
Author(s):  
Hyunsoo Kim ◽  
Sung-Nam Lee
Keyword(s):  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting ◽  
Theoretical Considerations

Device and circuit modeling of GaN/InGaN light emitting diodes (LEDs) for optimum current spreading

2003 ◽  
Vol 47 (10) ◽  
pp. 1817-1823 ◽  
Author(s):  
A. Ebong ◽  
S. Arthur ◽  
E. Downey ◽  
X.A. Cao ◽  
S. LeBoeuf ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Circuit Modeling ◽  
Current Spreading ◽  
Light Emitting

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

scholarly journals Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

2013 ◽  
Vol 21 (4) ◽  
pp. 4958 ◽  
Author(s):  
Zi-Hui Zhang ◽  
Swee Tiam Tan ◽  
Wei Liu ◽  
Zhengang Ju ◽  
Ke Zheng ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting

Graphene as current spreading layer on AlGaInP light emitting diodes

2018 ◽  
Vol 123 (17) ◽  
pp. 175701
Author(s):  
Xia Guo ◽  
Yajie Feng ◽  
Qiaoli Liu ◽  
Anqi Hu ◽  
Xiaoying He ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting

scholarly journals Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019 ◽  
Vol 66 (11) ◽  
pp. 4811-4816 ◽  
Author(s):  
Roberto Macaluso ◽  
Giuseppe Lullo ◽  
Isodiana Crupi ◽  
Fulvio Caruso ◽  
Eric Feltin ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Injection Efficiency ◽  
Current Spreading ◽  
Light Emitting

Zinc oxide-based current spreading layer behavior on the performance of P -side-up thin-film red light emitting diodes

2018 ◽  
Vol 432 ◽  
pp. 196-201 ◽  
Author(s):  
Ming-Chun Tseng ◽  
Dong-Sing Wuu ◽  
Chi-Lu Chen ◽  
Hsin-Ying Lee ◽  
Ray-Hua Horng
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Current Spreading ◽  
Light Emitting ◽  
Layer Behavior

scholarly journals Theoretical and experimental analysis of current spreading in AlGaInP light emitting diodes

2006 ◽  
Vol 100 (8) ◽  
pp. 083109 ◽  
Author(s):  
R. M. Perks ◽  
A. Porch ◽  
D. V. Morgan ◽  
J. Kettle
Keyword(s):  
Experimental Analysis ◽  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting

Reliability of AlGaInP light emitting diodes with an ITO current spreading layer

2009 ◽  
Vol 30 (6) ◽  
pp. 064004 ◽  
Author(s):  
Gao Wei ◽  
Guo Weiling ◽  
Zhu Yanxu ◽  
Jiang Wenjing ◽  
Shen Guangdi
Keyword(s):  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting
Sign in / Sign up

Export Citation Format

Share Document