Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side

2014 ◽  
Vol 11 (3-4) ◽  
pp. 817-820
Author(s):  
Thorsten Passow ◽  
Michael Kunzer ◽  
Paul Börner ◽  
Wilfried Pletschen ◽  
Klaus Köhler ◽  
...  
2003 ◽  
Vol 799 ◽  
Author(s):  
O. Kwon ◽  
J. Boeckl ◽  
M. L. Lee ◽  
A. J. Pitera ◽  
E. A. Fitzgerald ◽  
...  

ABSTRACTAlGaInP visible resonant cavity light emitting diodes (RCLEDs) were grown and fabricated on low-dislocation density, SiGe/Si metamorphic substrates by molecular beam epitaxy. A comparison with devices grown on GaAs and Ge substrates showed that not only did the RCLED device structure successfully transfer to the SiGe substrate, but also a higher optical output power was obtained. This is a result of a high thermal conductivity and an enhanced lateral current spreading. In addition, the growth of an AlGaAs current spreading layer and a modified top metal contact were incorporated to the SiGe RCLED to improve the device performance. With these improvements, a 410μm × 410μm device was fabricated with an optical power of 166μW at 665nm peak wavelength under 500mA current injection and an extremely narrow full width half maximum (FWHM) value of 3.63nm for electroluminescent emission under 50mA injection current.


2010 ◽  
Vol 54 (10) ◽  
pp. 1119-1124 ◽  
Author(s):  
Hongping Zhao ◽  
Guangyu Liu ◽  
Ronald A. Arif ◽  
Nelson Tansu

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