scholarly journals Meyer–Neldel rule for dark current in charge-coupled devices

2001 ◽  
Vol 89 (12) ◽  
pp. 8179-8182 ◽  
Author(s):  
Ralf Widenhorn ◽  
Lars Mündermann ◽  
Armin Rest ◽  
Erik Bodegom
Keyword(s):  
Dark Current ◽  
Charge Coupled Devices

scholarly journals Nonlinear time dependence of dark current in charge-coupled devices

2011 ◽  
Author(s):  
Justin C. Dunlap ◽  
Erik Bodegom ◽  
Ralf Widenhorn
Keyword(s):  
Time Dependence ◽  
Dark Current ◽  
Charge Coupled Devices

Radiation-Induced Deep-Level Traps in CCD Image Sensors

2007 ◽  
Vol 994 ◽  
Author(s):  
Cristian Tivarus ◽  
William C. McColgin
Keyword(s):  
Dark Current ◽  
Deep Level ◽  
Image Sensors ◽  
Charge Coupled Devices ◽  
Radiation Induced ◽  
Ccd Image ◽  
Silicon Defects

AbstractDark current spectroscopy (DCS) is used to study deep level traps corresponding to the bright pixels that form the histogram “tails” of irradiated charge-coupled devices (CCD). We found four distinct traps, among which the double vacancy (V2) and the vacancy-phosphorous (VP) have the highest concentrations and generation rates. We show that DCS can be used to examine the annealing mechanisms of silicon defects to concentrations as low as 5 × 107 cm−3.

scholarly journals Low dark current, back-illuminated charge coupled devices

2009 ◽  
Author(s):  
R. C. Westhoff ◽  
B. E. Burke ◽  
H. R. Clark ◽  
A. H. Loomis ◽  
D. J. Young ◽  
...  
Keyword(s):  
Dark Current ◽  
Charge Coupled Devices ◽  
Back Illuminated

Characterization of dark current non-uniformities in charge-coupled devices

1984 ◽  
Vol 27 (2) ◽  
pp. 147-154 ◽  
Author(s):  
J. van der Spiegel ◽  
G.J. Declerck
Keyword(s):  
Dark Current ◽  
Charge Coupled Devices
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