scholarly journals Low dark current, back-illuminated charge coupled devices

2009 ◽  
Author(s):  
R. C. Westhoff ◽  
B. E. Burke ◽  
H. R. Clark ◽  
A. H. Loomis ◽  
D. J. Young ◽  
...  
Keyword(s):  
Dark Current ◽  
Charge Coupled Devices ◽  
Back Illuminated

scholarly journals Meyer–Neldel rule for dark current in charge-coupled devices

2001 ◽  
Vol 89 (12) ◽  
pp. 8179-8182 ◽  
Author(s):  
Ralf Widenhorn ◽  
Lars Mündermann ◽  
Armin Rest ◽  
Erik Bodegom
Keyword(s):  
Dark Current ◽  
Charge Coupled Devices

AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications

2000 ◽  
Vol 639 ◽  
Author(s):  
P. Lamarre ◽  
A. Hairston ◽  
S. Tobin ◽  
K. K. Wong ◽  
M. F. Taylor ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Dark Current ◽  
Current Data ◽  
Conduction Model ◽  
Zero Bias ◽  
Imaging Results ◽  
Solar Blind ◽  
Uv Response ◽  
Full Depletion ◽  
Back Illuminated

ABSTRACTThis paper presents UV imaging results for a 256×256 AlGaN Focal Plane Array that uses a back-illuminated AlGaN heterostructure p-i-n photodiode array, with 30×30 μm2 unit cells, operating at zero bias voltage, with a narrow-band UV response between 310 and 325 nm. The 256×256 array was fabricated from a multilayer AlGaN film grown by MOCVD on a sapphire substrate. The UV response operability (>0.4×average) was 94.8%, and the UV response uniformity (σ/μ) was 16.8%. Data are also presented for back-illuminated AlGaN p-i-n photodiodes from other films with cutoff wavelengths ranging between 301 and 364 nm. Data for variable-area diagnostic arrays of p-i-n AlGaN photodiodes with a GaN absorber (cutoff=364 nm) show: (1) high external quantum efficiency (50% at V=0 and 62% at V=-9 V); (2) the dark current is proportional to junction area, not perimeter; (3) the forward and reverse currents are uniform (σ/μ=50% for forty 30×30 μm2 diodes at V=−40 V); (4) the reverse-bias dark current data versus temperature and bias voltage can be fit very well by a hopping conduction model; and (5) capacitance versus voltage data are consistent with nearly full depletion of the unintentionally-doped 0.4 μm thick GaN absorber layer and imply a donor concentration of 3-4×1016 cm−3.

scholarly journals Nonlinear time dependence of dark current in charge-coupled devices

2011 ◽  
Author(s):  
Justin C. Dunlap ◽  
Erik Bodegom ◽  
Ralf Widenhorn
Keyword(s):  
Time Dependence ◽  
Dark Current ◽  
Charge Coupled Devices

Integrated electronic shutter for back-illuminated charge-coupled devices

1993 ◽  
Vol 40 (7) ◽  
pp. 1231-1237 ◽  
Author(s):  
R.K. Reich ◽  
R.W. Mountain ◽  
W.H. McGonagle ◽  
J.C.-M. Huang ◽  
J.C. Twichell ◽  
...  
Keyword(s):  
Charge Coupled Devices ◽  
Back Illuminated ◽  
Electronic Shutter

Radiation-Induced Deep-Level Traps in CCD Image Sensors

2007 ◽  
Vol 994 ◽  
Author(s):  
Cristian Tivarus ◽  
William C. McColgin
Keyword(s):  
Dark Current ◽  
Deep Level ◽  
Image Sensors ◽  
Charge Coupled Devices ◽  
Radiation Induced ◽  
Ccd Image ◽  
Silicon Defects

AbstractDark current spectroscopy (DCS) is used to study deep level traps corresponding to the bright pixels that form the histogram “tails” of irradiated charge-coupled devices (CCD). We found four distinct traps, among which the double vacancy (V2) and the vacancy-phosphorous (VP) have the highest concentrations and generation rates. We show that DCS can be used to examine the annealing mechanisms of silicon defects to concentrations as low as 5 × 107 cm−3.

Development of fully depleted and back-illuminated charge-coupled devices for soft x-ray imager onboard the NeXT satellite

2006 ◽  
Author(s):  
Shin-ichiro Takagi ◽  
Takeshi Go Tsuru ◽  
Tatsuya Inui ◽  
Midori Ozawa ◽  
Hironori Matsumoto ◽  
...  
Keyword(s):  
Fully Depleted ◽  
X Ray ◽  
Charge Coupled Devices ◽  
Back Illuminated

scholarly journals Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

2003 ◽  
Vol 50 (1) ◽  
pp. 225-238 ◽  
Author(s):  
S.E. Holland ◽  
D.E. Groom ◽  
N.P. Palaio ◽  
R.J. Stover ◽  
Mingzhi Wei
Keyword(s):  
High Resistivity ◽  
Fully Depleted ◽  
Charge Coupled Devices ◽  
High Resistivity Silicon ◽  
Back Illuminated
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