Interface state trapping and dark current generation in buried‐channel charge‐coupled devices

1982 ◽  
Vol 53 (3) ◽  
pp. 1745-1753 ◽  
Author(s):  
Nelson S. Saks
Keyword(s):  
Dark Current ◽  
Interface State ◽  
Current Generation ◽  
Buried Channel ◽  
Charge Coupled Devices

scholarly journals On the charge-handling capacity of epitaxial and ion-implanted GaAs buried channel charge-coupled devices

1986 ◽  
Vol 21 (6) ◽  
pp. 349-356
Author(s):  
D. Rigaud ◽  
D. Sodini ◽  
K. Torbati ◽  
A. Touboul ◽  
R. Poirier
Keyword(s):  
Buried Channel ◽  
Charge Coupled Devices ◽  
Ion Implanted

Noise in buried channel charge-coupled devices

1976 ◽  
Vol 23 (2) ◽  
pp. 215-223 ◽  
Author(s):  
R.W. Brodersen ◽  
S.P. Emmons
Keyword(s):  
Buried Channel ◽  
Charge Coupled Devices

scholarly journals Meyer–Neldel rule for dark current in charge-coupled devices

2001 ◽  
Vol 89 (12) ◽  
pp. 8179-8182 ◽  
Author(s):  
Ralf Widenhorn ◽  
Lars Mündermann ◽  
Armin Rest ◽  
Erik Bodegom
Keyword(s):  
Dark Current ◽  
Charge Coupled Devices

Low-temperature characteristics of buried channel charge-coupled devices

1986 ◽  
Vol 69 (8) ◽  
pp. 30-39
Author(s):  
Masafumi Kimata ◽  
Masahiko Denda ◽  
Naoki Yutani ◽  
Syuhei Iwade ◽  
Natsuro Tsubouchi
Keyword(s):  
Low Temperature ◽  
Temperature Characteristics ◽  
Buried Channel ◽  
Charge Coupled Devices
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