Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

2001 ◽  
Vol 78 (12) ◽  
pp. 1685-1687 ◽  
Author(s):  
J. W. P. Hsu ◽  
M. J. Manfra ◽  
D. V. Lang ◽  
S. Richter ◽  
S. N. G. Chu ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Reverse Bias ◽  
Schottky Diodes

Barrier Lowering Effects for Metal-Silicide Schottky Diodes at High Reverse Bias

EPE Journal ◽  
1998 ◽  
Vol 7 (3-4) ◽  
pp. 7-11 ◽  
Author(s):  
C. Furio ◽  
G. Charitat ◽  
A. Lhoite ◽  
J.M. Dilhac
Keyword(s):  
Reverse Bias ◽  
Schottky Diodes ◽  
Metal Silicide ◽  
High Reverse Bias

A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

1999 ◽  
Vol 595 ◽  
Author(s):  
Anand V. Sampath ◽  
Mira Misra ◽  
Kshitij Seth ◽  
Yuri. Fedyunin ◽  
Hock M. Ng ◽  
...  
Keyword(s):  
Comparative Study ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Etch Pits ◽  
Sapphire Substrates ◽  
Fabrication And Characterization

AbstractIn this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

2016 ◽  
Vol 858 ◽  
pp. 380-383 ◽  
Author(s):  
Stefania Privitera ◽  
Grazia Litrico ◽  
Massimo Camarda ◽  
Nicolò Piluso ◽  
Francesco La Via
Keyword(s):  
Spatial Distribution ◽  
Electrical Properties ◽  
Electrical Transport ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Minority Carrier Lifetime ◽  
Induced Currents ◽  
Hecd Laser

In this paper we have studied the connection between crystal quality and electrical transport in 4H-SiC by simultaneous micro-photoluminescence (μPL) and photocurrent (PC) measurements. We have used a focused HeCd laser at 325 nm (i.e. above bandgap) to measure with a spatial resolution of few microns both the μPL spectra and the I-V characteristics in 4H-SiC/Ni Schottky diodes. We found that the PC signal acquired along a defect can give information on its spatial distribution in depth. The minority carrier lifetime has been also estimated and its dependence on the emission wavelength has been determined for several stacking faults.

scholarly journals A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

2000 ◽  
Vol 5 (S1) ◽  
pp. 577-583
Author(s):  
Anand V. Sampath ◽  
Mira Misra ◽  
Kshitij Seth ◽  
Yuri. Fedyunin ◽  
Hock M. Ng ◽  
...  
Keyword(s):  
Comparative Study ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Etch Pits ◽  
Sapphire Substrates ◽  
Fabrication And Characterization

In this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

scholarly journals Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

2003 ◽  
Vol 82 (8) ◽  
pp. 1293-1295 ◽  
Author(s):  
E. J. Miller ◽  
D. M. Schaadt ◽  
E. T. Yu ◽  
P. Waltereit ◽  
C. Poblenz ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Current Reduction ◽  
Electrochemical Surface Treatment

Photoresponse Study of Polycrystalline Diamond thin Film Schottky Diodes

1994 ◽  
Vol 339 ◽  
Author(s):  
G. Zhao ◽  
T. Stacy ◽  
E. M. Charlson ◽  
E. J. Charlson ◽  
M. Hajsaid ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Polycrystalline Diamond ◽  
Photoelectric Method ◽  
Surface Reflection ◽  
Diamond Thin Film ◽  
Boron Doped ◽  
Hot Filament Cvd ◽  
Hot Filament

ABSTRACTWe are reporting the first quantitative photoresponse characteristics of boron doped hot-filament CVD (HFCVD) diamond based Schottky diodes using semi-transparent aluminum contacts in the spectral range of 300–1050 nm. Quantum efficiencies, obtained without correction for surface reflection in the visible and near UV region, were between 5 % and 10% when the diodes were unbiased. Effect of reverse bias on the photoresponse was investigated at selected photon energies. Reverse biased diodes exhibit increasing photoresponse and ultimately saturation. Quantum efficiency as high as 30% was also obtained at 500 nm, when a reverse bias of over I volt was applied. The photoresponse mechanism of CVD diamond Schottky diodes is also discussed. A Schottky barrier height of 1.15 ± 0.02 eV for Al-HFCVD diamond contacts was determined using the d.c. photoelectric method.

Current Induced Degradation of a-Si:H Pin and Schottky Switches

1992 ◽  
Vol 258 ◽  
Author(s):  
K.J.B.M. Nieuwesteeg ◽  
J. Boogaard ◽  
G. Oversluizen
Keyword(s):  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Schottky Contact ◽  
Reverse Current ◽  
Bias Current ◽  
Hole Injection ◽  
Carrier Injection ◽  
Degradation Behaviour ◽  
Current Stress

ABSTRACTForward-bias current stress experiments were performed on α-Si:H p-i-n and Schottky switches at several temperatures and at current densities up to 6 A/cm2. In Schottky diodes, current stressing results in a lowering of the forward-bias SCLC current together with an increase of its thermal activation energy. The reverse current is unaffected. The rate of degradation of the forward current increases with increasing temperature. From a comparison of the degradation behaviour of Schottky's with different barrier height we find that the rate of degradation is correlated to the minority-carrier injection ratio of the Schottky contact. The effects are interpreted as being due to metastable state creation in the bulk α-Si:H. The rectifying properties of the metal-to-semiconductor contact are relatively stable to current stress.The forward-bias I-V curves of p-i-n diodes degrade much faster than those of the Schottky switches. At the same time, the reverse-bias current increases due to the stress. The lower stability to current-stress of p-i-n diodes is ascribed to the much higher hole injection in the mesa. After a short time, the reverse-bias current becomes dominated by e-h generation from the created deep states in the i-layer and then gives a direct indication of its time dependence.

scholarly journals Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

2008 ◽  
Vol 600-603 ◽  
pp. 967-970 ◽  
Author(s):  
Mitsutaka Nakamura ◽  
Yoshikazu Hashino ◽  
Tomoaki Furusho ◽  
Hiroyuki Kinoshita ◽  
Hiromu Shiomi ◽  
...  
Keyword(s):  
Ideality Factor ◽  
Basal Plane ◽  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Bias Current ◽  
Device Performance ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effects of basal-plane defects on the performance of 4H-SiC Schottky diodes using a Ni electrode are demonstrated. Systematic characterization was performed using 4H-SiC epitaxial layers grown by sublimation epitaxy on substrates with various off-axis angles. As the off-axis angle increases, the ideality factor of the current-voltage characteristics increases, and the Schottky barrier height decreases, corresponding to an increase in the number of basal-plane defects. The reverse-bias current degrades for high off-axis samples. These results indicate that basal-plane defects degrade the device performance. Schottky diodes that possesses good characteristics were obtained for samples with low off-axis angles (2o- and 4o-off samples).

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