Photoresponse Study of Polycrystalline Diamond thin Film Schottky Diodes

1994 ◽  
Vol 339 ◽  
Author(s):  
G. Zhao ◽  
T. Stacy ◽  
E. M. Charlson ◽  
E. J. Charlson ◽  
M. Hajsaid ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Polycrystalline Diamond ◽  
Photoelectric Method ◽  
Surface Reflection ◽  
Diamond Thin Film ◽  
Boron Doped ◽  
Hot Filament Cvd ◽  
Hot Filament

ABSTRACTWe are reporting the first quantitative photoresponse characteristics of boron doped hot-filament CVD (HFCVD) diamond based Schottky diodes using semi-transparent aluminum contacts in the spectral range of 300–1050 nm. Quantum efficiencies, obtained without correction for surface reflection in the visible and near UV region, were between 5 % and 10% when the diodes were unbiased. Effect of reverse bias on the photoresponse was investigated at selected photon energies. Reverse biased diodes exhibit increasing photoresponse and ultimately saturation. Quantum efficiency as high as 30% was also obtained at 500 nm, when a reverse bias of over I volt was applied. The photoresponse mechanism of CVD diamond Schottky diodes is also discussed. A Schottky barrier height of 1.15 ± 0.02 eV for Al-HFCVD diamond contacts was determined using the d.c. photoelectric method.

Silver on diamond Schottky diodes formed on boron doped hot‐filament chemical vapor deposited polycrystalline diamond films

1992 ◽  
Vol 61 (9) ◽  
pp. 1119-1121 ◽  
Author(s):  
G. Zhao ◽  
T. Stacy ◽  
E. J. Charlson ◽  
E. M. Charlson ◽  
C. H. Chao ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Chemical Vapor Deposited ◽  
Hot Filament

Characterization of undoped and boron-doped polycrystalline diamond films synthesized by hot-filament chemical vapor deposition using methanol

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Hot Filament

Effect of Mechanical Stress on Polycrystalline Diamond Schottky Diode I-V Characteristics

1992 ◽  
Vol 270 ◽  
Author(s):  
G. Zhao ◽  
E. M. Charlson ◽  
E. J. Charlson ◽  
T. Stacy ◽  
J. Meese ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Deposition Process ◽  
Stress Sensitivity ◽  
Stress Effect ◽  
Mechanical Sensors ◽  
Hot Filament

ABSTRACTSchottky diodes to be used for mechanical stress effect studies were fabricated using aluminum contacts to polycrystalline diamond thin films grown by a hot-filament assisted chemical vapor deposition process. Compressive stress was found to have a large effect on the forward biased current-voltage characteristics of the diode. At selected values of constant forward biased current, a linear relationship between voltage and stress, for stress less than 10 N was observed. The stress sensitivity of the diode was as high as 0.74 V/N at 1 mA forward bias. This study shows that polycrystalline diamond Schottky diodes are stress sensitive devices and have potential as mechanical sensors.

scholarly journals Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

2008 ◽  
Vol 600-603 ◽  
pp. 967-970 ◽  
Author(s):  
Mitsutaka Nakamura ◽  
Yoshikazu Hashino ◽  
Tomoaki Furusho ◽  
Hiroyuki Kinoshita ◽  
Hiromu Shiomi ◽  
...  
Keyword(s):  
Ideality Factor ◽  
Basal Plane ◽  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Bias Current ◽  
Device Performance ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effects of basal-plane defects on the performance of 4H-SiC Schottky diodes using a Ni electrode are demonstrated. Systematic characterization was performed using 4H-SiC epitaxial layers grown by sublimation epitaxy on substrates with various off-axis angles. As the off-axis angle increases, the ideality factor of the current-voltage characteristics increases, and the Schottky barrier height decreases, corresponding to an increase in the number of basal-plane defects. The reverse-bias current degrades for high off-axis samples. These results indicate that basal-plane defects degrade the device performance. Schottky diodes that possesses good characteristics were obtained for samples with low off-axis angles (2o- and 4o-off samples).

Electrochemical characterization of boron-doped polycrystalline diamond thin-film electrodes

1995 ◽  
Vol 353 (2) ◽  
pp. 171-173 ◽  
Author(s):  
Peilin Zhu ◽  
Jianzhong Zhu ◽  
Shenzhong Yang ◽  
Xikang Zhang ◽  
Guoxiong Zhang
Keyword(s):  
Thin Film ◽  
Polycrystalline Diamond ◽  
Electrochemical Characterization ◽  
Diamond Thin Film ◽  
Boron Doped ◽  
Thin Film Electrodes

Effect of Initial Growth and Seeding Conditions on Boron Doped Hot Filament Diamond Films

2011 ◽  
Vol 1282 ◽  
Author(s):  
Jerry Zimmer ◽  
Thomas Hantschel ◽  
Gerry Chandler ◽  
Andreas Schulze ◽  
Wilfried Vandervorst ◽  
...  
Keyword(s):  
Diamond Films ◽  
Growth Conditions ◽  
Initial Growth ◽  
Boron Doped ◽  
Interface Characteristics ◽  
Hot Filament Cvd ◽  
Afm Probe ◽  
Hot Filament ◽  
Film Interface ◽  
Initial Seeding

ABSTRACTBoron doped CVD diamond has been extensively studied in bulk form but little has been published regarding the effects that the initial seeding and growth conditions can have on the characteristics of the initial layer of diamond. This can have a dramatic effect on the performance of the film in applications ranging from AFM probe tips to electrodes used for water purification and other applications. This paper will examine how initial growth conditions and seeding methods can affect the film interface characteristics of doped diamond grown in hot filament CVD reactors.

Sign in / Sign up

Export Citation Format

Share Document