High-performance metal–ferroelectric–insulator–semiconductor structures with a damage-free and hydrogen-free silicon–nitride buffer layer
Keyword(s):
Keyword(s):
1998 ◽
Vol 45
(12)
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pp. 2548-2551
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Keyword(s):
2001 ◽
Vol 19
(5)
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pp. 2542-2548
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1989 ◽
Vol 97
(1132)
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pp. 1466-1470
Keyword(s):
2002 ◽
Vol 49
(9)
◽
pp. 1526-1531
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