Atom-scale optical determination of Si-oxide layer thickness during layer-by-layer oxidation: Theoretical study

2000 ◽  
Vol 77 (26) ◽  
pp. 4286-4288 ◽  
Author(s):  
Takashi Nakayama ◽  
Misao Murayama
Keyword(s):  
Oxide Layer ◽  
Layer Thickness ◽  
Theoretical Study ◽  
Layer By Layer ◽  
Oxide Layer Thickness ◽  
Optical Determination

Determination of a grown oxide layer thickness and optical constants of Zn and Cd metals

Optik ◽  
2021 ◽  
Vol 232 ◽  
pp. 166552
Author(s):  
Mohamed Shehata ◽  
Alshaimaa W. Abdallah ◽  
Sobhy S. Ibrahim ◽  
Mohamed H. Osman ◽  
Nabil N. Nagib
Keyword(s):  
Oxide Layer ◽  
Layer Thickness ◽  
Optical Constants ◽  
Oxide Layer Thickness

Determination of the Oxide Layer Thickness in Core−Shell Zerovalent Iron Nanoparticles

Langmuir ◽  
2008 ◽  
Vol 24 (8) ◽  
pp. 4329-4334 ◽  
Author(s):  
John E. Martin ◽  
Andrew A. Herzing ◽  
Weile Yan ◽  
Xiao-qin Li ◽  
Bruce E. Koel ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Layer Thickness ◽  
Iron Nanoparticles ◽  
Zerovalent Iron ◽  
Core Shell ◽  
Oxide Layer Thickness ◽  
Zerovalent Iron Nanoparticles

Determination of the Oxide Layer Thickness on Beryllium Metal Particles

AIHAJ ◽  
1989 ◽  
Vol 50 (10) ◽  
pp. 550-553 ◽  
Author(s):  
MARK D. HOOVER ◽  
BRYAN T. CASTORINA ◽  
GREGORY L. FINCH ◽  
SIMON J. ROTHENBERG
Keyword(s):  
Oxide Layer ◽  
Layer Thickness ◽  
Metal Particles ◽  
Oxide Layer Thickness ◽  
Beryllium Metal

Characterization of Inhomogeneity in Thermal Oxide SiO2 Films on 4H-SiC Epitaxial Substrates by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy

2018 ◽  
Vol 924 ◽  
pp. 273-276 ◽  
Author(s):  
Masanobu Yoshikawa ◽  
Keiko Inoue ◽  
Junichiro Sameshima ◽  
Hirohumi Seki
Keyword(s):  
Fourier Transform ◽  
Oxide Layer ◽  
Layer Thickness ◽  
Phonon Mode ◽  
Fourier Transform Infrared ◽  
Blue Shift ◽  
Peak Frequency ◽  
Oxide Layer Thickness ◽  
Thermal Oxide ◽  
Ft Ir

We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with a various thickness, grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by about 5 cm−1 as the oxide-layer thickness decreased from 50-60 nm to 10 nm. The blue shift of the TO mode is considerd to be caused by interfacial compressive stresses in the oxide-layer. On the other hand, the TO phonon mode was found to dramatically decrease as the oxide-layer thickness decreased from 10 nm to 1.7 nm. The CL measurement indicates that the intensity of the CL peaks at about 460 and 490 nm attributed to oxygen vacancy centers (OVCs) for No.2 become stronger than that for No.1. From a comparison between FT-IR and CL measurements, we concluded that the red-shift of the TO phonon with decreasing the oxide-layer thickness can mainly be attributed to an increase in inhomogeneity at the SiO2/SiC interface with decreasing oxide-layer thickness.

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