Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature

2001 ◽  
Vol 89 (1) ◽  
pp. 380-385 ◽  
Author(s):  
S. Fukushima ◽  
T. Obata ◽  
N. Otsuka
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam

Electrical Properties of Heavily Be-doped GaAs grown by Molecular Beam Epitaxy

1989 ◽  
Vol 163 ◽  
Author(s):  
H. Shibata ◽  
Y. Makita ◽  
A. Yamada ◽  
N. Ohnishi ◽  
M. Mori ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Valence Band ◽  
Temperature Region ◽  
Room Temperature ◽  
Molecular Beam ◽  
Impurity Band ◽  
Carrier Scattering

AbstractElectrical properties of heavily Be-doped GaAs grown by molecular beam epitaxy were investigated systematically in a wide range of Be-concentration from 1× 1014 up to 2× 1020 cm-3 by using yan der Pauw technique. Probable carrier scattering mechanisms observed in this work are discussed by taking into account the radiative mechanisms of several new photoluminescence emissions previously observed in the band-edge-emission region of the samples. All samples were checked their electrical properties first at room-temperature. Five selected samples out of them were measured from 10° K up to room-temperature. Samples having the carrier concentration from 1014 to 1018 cm3 presented typical semiconductor-like conduction with finite carrier excitation energy. For samples having carrier concentration 7× 1016 cm -3, the conduction mechanism at high temperature region above 30β K was dominated by holes thermally excited into valence band. At low temperature region below 30° K . it was dominated by holes hopping from neutral to ionized acceptors with the assistance of phonons. Hole mobilities of samples having the carrier concentration from 1017 to 1018 cm-3 showed an anomalous behavior in the low temperature region, which suggests the presence of a new type of carrier scattering mechanism. A radiative center denoted by lg-gl observed in this concentration region will be a candidate scattering center to explain these electrical behaviors. Samples having the carrier concentration larger than 1019 cm-3 demonstrated typically metallic electric conduction not owing to thermally excited carriers, which means that an impurity band is formed but merged with valence band. The density of state of this combined valence band mixed with impurity band can be supposed to reflect carrier concentration dependence of the PL emission bands observed in this region, i.e. [g-g]α , [g-g]β and [g-g]γ .

The effect of low-temperature annealing on the electrical properties of the p-type cadmium–mercury–tellurium heterostructures grown by molecular beam epitaxy

2013 ◽  
Vol 56 (3) ◽  
pp. 313-318
Author(s):  
D. Yu. Protasov ◽  
А. R. Novoselov ◽  
D. V. Kombarov ◽  
V. Ya. Kostyuchenko ◽  
А. Е. Dolbak ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Annealing ◽  
P Type

Electrical properties of InP grown by gas‐source molecular beam epitaxy at low temperature

1992 ◽  
Vol 60 (17) ◽  
pp. 2104-2106 ◽  
Author(s):  
B. W. Liang ◽  
P. Z. Lee ◽  
D. W. Shih ◽  
C. W. Tu
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Gas Source

Effect of phosphorus on electrical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy

1996 ◽  
Vol 12 (2) ◽  
pp. 187-189
Author(s):  
P. A. Postigo ◽  
F. García-Péerez ◽  
M. L. Dotor ◽  
D. Golmayo ◽  
F. Briones
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Atomic Layer

scholarly journals Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

2016 ◽  
Vol 24 (1) ◽  
Author(s):  
D. Benyahia ◽  
Ł. Kubiszyn ◽  
K. Michalczewski ◽  
A. Kębłowski ◽  
P. Martyniuk ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Flux Ratio ◽  
X Ray Diffraction ◽  
Group V

Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

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