Electrical properties of InP grown by gas‐source molecular beam epitaxy at low temperature

1992 ◽  
Vol 60 (17) ◽  
pp. 2104-2106 ◽  
Author(s):  
B. W. Liang ◽  
P. Z. Lee ◽  
D. W. Shih ◽  
C. W. Tu
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Gas Source

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

1991 ◽  
Vol 110 (4) ◽  
pp. 910-914 ◽  
Author(s):  
K. Rakennus ◽  
K. Tappura ◽  
T. Hakkarainen ◽  
H. Asonen ◽  
R. Laiho ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
Gas Source ◽  
Interface Effects

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
M. J. Jurkovic ◽  
L.K. Li ◽  
B. Turk ◽  
W. I. Wang ◽  
S. Syed ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
High Quality ◽  
Gas Source ◽  
Background Doping ◽  
Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

1997 ◽  
Vol 294 (1-2) ◽  
pp. 84-87 ◽  
Author(s):  
R. Chelly ◽  
J. Werckmann ◽  
T. Angot ◽  
P. Louis ◽  
D. Bolmont ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Hot Wire ◽  
Gas Source

Electrical Properties of Heavily Be-doped GaAs grown by Molecular Beam Epitaxy

1989 ◽  
Vol 163 ◽  
Author(s):  
H. Shibata ◽  
Y. Makita ◽  
A. Yamada ◽  
N. Ohnishi ◽  
M. Mori ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Valence Band ◽  
Temperature Region ◽  
Room Temperature ◽  
Molecular Beam ◽  
Impurity Band ◽  
Carrier Scattering

AbstractElectrical properties of heavily Be-doped GaAs grown by molecular beam epitaxy were investigated systematically in a wide range of Be-concentration from 1× 1014 up to 2× 1020 cm-3 by using yan der Pauw technique. Probable carrier scattering mechanisms observed in this work are discussed by taking into account the radiative mechanisms of several new photoluminescence emissions previously observed in the band-edge-emission region of the samples. All samples were checked their electrical properties first at room-temperature. Five selected samples out of them were measured from 10° K up to room-temperature. Samples having the carrier concentration from 1014 to 1018 cm3 presented typical semiconductor-like conduction with finite carrier excitation energy. For samples having carrier concentration 7× 1016 cm -3, the conduction mechanism at high temperature region above 30β K was dominated by holes thermally excited into valence band. At low temperature region below 30° K . it was dominated by holes hopping from neutral to ionized acceptors with the assistance of phonons. Hole mobilities of samples having the carrier concentration from 1017 to 1018 cm-3 showed an anomalous behavior in the low temperature region, which suggests the presence of a new type of carrier scattering mechanism. A radiative center denoted by lg-gl observed in this concentration region will be a candidate scattering center to explain these electrical behaviors. Samples having the carrier concentration larger than 1019 cm-3 demonstrated typically metallic electric conduction not owing to thermally excited carriers, which means that an impurity band is formed but merged with valence band. The density of state of this combined valence band mixed with impurity band can be supposed to reflect carrier concentration dependence of the PL emission bands observed in this region, i.e. [g-g]α , [g-g]β and [g-g]γ .

Low-temperature heteroepitaxial growth of Si on Sapphire by disilane gas-source molecular beam epitaxy

1989 ◽  
Vol 97 (3-4) ◽  
pp. 587-590 ◽  
Author(s):  
Kazuaki Sawada ◽  
Makoto Ishida ◽  
Kiyoteru Hayama ◽  
Tetsuro Nakamura ◽  
Tetso Suzaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Gas Source

Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

1992 ◽  
Vol 61 (14) ◽  
pp. 1646-1648 ◽  
Author(s):  
J. Ramdani ◽  
Y. He ◽  
M. Leonard ◽  
N. El‐Masry ◽  
S. M. Bedair
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Resistivity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source
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