Electrical properties of low-temperature GaAs grown by molecular beam epitaxy and migration enhanced epitaxy

1993 ◽  
Vol 22 (12) ◽  
pp. 1433-1436 ◽  
Author(s):  
Kai Zhang ◽  
D. L. Miller
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Migration Enhanced Epitaxy ◽  
And Migration ◽  
Low Temperature Gaas

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Photoreflectance study of Si delta‐doped low‐temperature GaAs grown by molecular beam epitaxy

1995 ◽  
Vol 77 (5) ◽  
pp. 2124-2127 ◽  
Author(s):  
T. M. Cheng ◽  
C. Y. Chang ◽  
T. M. Hsu ◽  
W. C. Lee ◽  
J. H. Huang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Gaas

Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy

1991 ◽  
Vol 111 (1-4) ◽  
pp. 221-227 ◽  
Author(s):  
Takafumi Yao ◽  
Hiroaki Nakahara ◽  
Hirofumi Matuhata ◽  
Yasumasa Okada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Migration Enhanced Epitaxy ◽  
And Migration

Temperature‐dependent transport properties ofn+GaAs/low‐temperature GaAs/n+GaAs structures grown by molecular beam epitaxy

1996 ◽  
Vol 79 (11) ◽  
pp. 8488-8492 ◽  
Author(s):  
Jenn‐Fang Chen ◽  
Nie‐Chuan Chen ◽  
Shih‐Yang Chiu ◽  
Pie‐yong Wang ◽  
Wei‐I Lee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Transport Properties ◽  
Molecular Beam ◽  
Temperature Dependent ◽  
Dependent Transport ◽  
Low Temperature Gaas
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