Tunable work functions of platinum gate electrode on HfO2 thin films for metal-oxide-semiconductor devices

2008 ◽  
Vol 92 (10) ◽  
pp. 102901 ◽  
Author(s):  
Yong-Mu Kim ◽  
Jang-Sik Lee
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Electrode ◽  
Work Functions

Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices

2012 ◽  
Vol 112 (1) ◽  
pp. 013717 ◽  
Author(s):  
Jonathan Avner Rothschild ◽  
Aya Cohen ◽  
Anna Brusilovsky ◽  
Lior Kornblum ◽  
Yaron Kauffmann ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Fermi Level ◽  
Semiconductor Devices ◽  
Alloy System ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Electrode ◽  
Ni Alloy

Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices

2000 ◽  
Vol 88 (12) ◽  
pp. 7192-7196 ◽  
Author(s):  
E. K. Evangelou ◽  
N. Konofaos ◽  
X. A. Aslanoglou ◽  
C. A. Dimitriadis ◽  
P. Patsalas ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Electrode ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
Sign in / Sign up

Export Citation Format

Share Document