Characterization of device parameters in high‐temperature metal‐oxide‐semiconductor field‐effect transistors in β‐SiC thin films

J. W. Palmour; H. S. Kong; R. F. Davis

doi:10.1063/1.341731

Characterization of device parameters in high‐temperature metal‐oxide‐semiconductor field‐effect transistors in β‐SiC thin films

Journal of Applied Physics ◽

10.1063/1.341731 ◽

1988 ◽

Vol 64 (4) ◽

pp. 2168-2177 ◽

Cited By ~ 100

Author(s):

J. W. Palmour ◽

H. S. Kong ◽

R. F. Davis

Keyword(s):

Thin Films ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1849424 ◽

2005 ◽

Vol 97 (4) ◽

pp. 046106 ◽

Cited By ~ 4

Author(s):

Stephen K. Powell ◽

Neil Goldsman ◽

Aivars Lelis ◽

James M. McGarrity ◽

Flynn B. McLean

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Modeling

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High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films

Applied Physics Letters ◽

10.1063/1.98282 ◽

1987 ◽

Vol 51 (24) ◽

pp. 2028-2030 ◽

Cited By ~ 101

Author(s):

J. W. Palmour ◽

H. S. Kong ◽

R. F. Davis

Keyword(s):

Thin Films ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Cited By ~ 1

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Cited By ~ 4

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Secondary Ion

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Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4770324 ◽

2012 ◽

Vol 112 (12) ◽

pp. 124511 ◽

Cited By ~ 20

Author(s):

Jiwon Chang ◽

Leonard F. Register ◽

Sanjay K. Banerjee

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Topological Insulator ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3130016 ◽

2021 ◽

pp. 1-7

Author(s):

Zhihao Chen ◽

Xinxin Yu ◽

Jianjun Zhou ◽

Shuman Mao ◽

Yuechan Kong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

Wave Detection

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Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Applied Physics Letters ◽

10.1063/1.3148830 ◽

2009 ◽

Vol 94 (22) ◽

pp. 223512 ◽

Cited By ~ 59

Author(s):

P. Kordoš ◽

R. Stoklas ◽

D. Gregušová ◽

J. Novák

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Dependent

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High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors

phys stat sol (a) ◽

10.1002/1521-396x(200111)188:1<219::aid-pssa219>3.0.co;2-l ◽

2001 ◽

Vol 188 (1) ◽

pp. 219-222 ◽

Cited By ~ 22

Author(s):

G. Simin ◽

A. Tarakji ◽

X. Hu ◽

A. Koudymov ◽

J. Yang ◽

...

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Performance ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1921 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1921-1928 ◽

Cited By ~ 5

Author(s):

Takeo Matsuki ◽

Seiji Inumiya ◽

Nobuyuki Mise ◽

Takahisa Eimori ◽

Yasuo Nara

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interfacial Reaction ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Temperature Annealing ◽

Gate Stack

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