Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition

Ying-Chia Chen; YewChung Sermon Wu; I-Chung Tung; Chi-Wei Chao; Ming-Shiann Feng; Huang-Chung Chen

doi:10.1063/1.1318937

Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.1318937 ◽

2000 ◽

Vol 77 (16) ◽

pp. 2521-2523 ◽

Cited By ~ 6

Author(s):

Ying-Chia Chen ◽

YewChung Sermon Wu ◽

I-Chung Tung ◽

Chi-Wei Chao ◽

Ming-Shiann Feng ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Excimer Laser ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Silicon Films ◽

Polycrystalline Silicon Films

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Structural properties of polycrystalline silicon films prepared at low temperature by plasma chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.349732 ◽

1991 ◽

Vol 70 (12) ◽

pp. 7374-7381 ◽

Cited By ~ 94

Author(s):

H. Kakinuma ◽

M. Mohri ◽

M. Sakamoto ◽

T. Tsuruoka

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Structural Properties ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Polycrystalline Silicon Films

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Continuous growth of polycrystalline silicon films by chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(82)90449-3 ◽

1982 ◽

Vol 56 (2) ◽

pp. 313-323 ◽

Cited By ~ 3

Author(s):

Kalluri R. Sarma ◽

M. John Rice

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Continuous Growth ◽

Polycrystalline Silicon Films

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Device-quality polycrystalline silicon films deposited at low process temperatures by hot-wire chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(98)01477-1 ◽

1999 ◽

Vol 337 (1-2) ◽

pp. 248-252 ◽

Cited By ~ 7

Author(s):

S.C. Saha ◽

J. Guillet ◽

B. Equer ◽

J.E. Bourée

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hot Wire ◽

Polycrystalline Silicon Films

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Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

Journal of Applied Physics ◽

10.1063/1.373867 ◽

2000 ◽

Vol 88 (3) ◽

pp. 1655-1663 ◽

Cited By ~ 13

Author(s):

J. Pejnefors ◽

S.-L. Zhang ◽

H. H. Radamson ◽

J. V. Grahn ◽

M. Östling

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Reduced Pressure ◽

Polycrystalline Silicon Films

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Synthesis of oriented and passivated polycrystalline silicon films on glass by hot wire chemical vapor deposition

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) ◽

10.1109/pvsc.2014.6925162 ◽

2014 ◽

Cited By ~ 3

Author(s):

Gurleen Kaur ◽

Md Abul Hossion ◽

Kulasekaran M ◽

Brij Mohan Arora

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hot Wire ◽

Polycrystalline Silicon Films

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Characterization of In Situ Phosphorus‐Doped Polycrystalline Silicon Films Grown by Disilane‐Based Low‐Pressure Chemical Vapor Deposition

Journal of The Electrochemical Society ◽

10.1149/1.1838117 ◽

1997 ◽

Vol 144 (11) ◽

pp. 3952-3958 ◽

Cited By ~ 10

Author(s):

J. V. Grahn ◽

J. Pejnefors ◽

M. Sandén ◽

S.‐L. Zhang ◽

M. Östling

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Polycrystalline Silicon Films ◽

Phosphorus Doped

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Low Temperature Growth of Polycrystalline Silicon Films by Hot-Wire Chemical Vapor Deposition Using SiCl4/H2 Gases

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l1207 ◽

2001 ◽

Vol 40 (Part 2, No. 11B) ◽

pp. L1207-L1210 ◽

Cited By ~ 7

Author(s):

Te-Chi Wong ◽

Jih-Jen Wu

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hot Wire ◽

Temperature Growth ◽

Low Temperature Growth ◽

Polycrystalline Silicon Films

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Control of Preferential Orientation in Polycrystalline Silicon Films Prepared by Plasma‐Enhanced Chemical Vapor Deposition

Journal of The Electrochemical Society ◽

10.1149/1.2086285 ◽

1990 ◽

Vol 137 (11) ◽

pp. 3666-3674 ◽

Cited By ~ 15

Author(s):

S. Hasegawa ◽

S. Yamamoto ◽

Y. Kurata

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Preferential Orientation ◽

Polycrystalline Silicon Films

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Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2012.05.009 ◽

2012 ◽

Vol 520 (18) ◽

pp. 5860-5866 ◽

Cited By ~ 22

Author(s):

Bing-Rui Wu ◽

Shih-Yung Lo ◽

Dong-Sing Wuu ◽

Sin-Liang Ou ◽

Hsin-Yuan Mao ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Seed Layer ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hot Wire ◽

Direct Growth ◽

Polycrystalline Silicon Films ◽

Induced Crystallization

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Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2gas mixture at 350 °C

Applied Physics Letters ◽

10.1063/1.111781 ◽

1994 ◽

Vol 64 (14) ◽

pp. 1865-1867 ◽

Cited By ~ 118

Author(s):

Toshiki Kaneko ◽

Masatoshi Wakagi ◽

Ken‐ichi Onisawa ◽

Tetsuroh Minemura

Keyword(s):

Chemical Vapor Deposition ◽

Radio Frequency ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Radio Frequency Plasma ◽

Frequency Plasma ◽

Polycrystalline Silicon Films

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