Relationship between fluence gradient and lateral grain growth in spatially controlled excimer laser crystallization of amorphous silicon films

2000 ◽  
Vol 88 (9) ◽  
pp. 4994-4999 ◽  
Author(s):  
Minghong Lee ◽  
Seungjae Moon ◽  
Mutsuko Hatano ◽  
Kenkichi Suzuki ◽  
Costas P. Grigoropoulos
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Excimer Laser ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization

A Simple Lateral Grain Growth of Poly-Si by Single Excimer Laser Crystallization of Amorphous Silicon Film Deposited on Polygon Shaped Trench

2003 ◽  
Vol 762 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Su-Hyuk Kang ◽  
Hee-Sun Shin ◽  
Min-Koo Han
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Excimer Laser ◽  
Silicon Film ◽  
Acute Angle ◽  
Molten Silicon ◽  
Laser Crystallization ◽  
Amorphous Silicon Film ◽  
Excimer Laser Irradiation ◽  
Excimer Laser Crystallization

AbstractA simple lateral grain growth of polysilicon employing single excimer laser irradiation is proposed. In order to increase the size of silicon grain and to control the location of the large lateral grain, the oxide trench is employed under the amorphous silicon film in the proposed method. The proposed oxide trench, which is shaped like a triangle or a polygon with an acute angle, induces temperature gradient on the molten silicon film during the solidification. It was verified by SEM that about 2 μm-long silicon grains are successfully achieved near the oxide trench edge and the locations of lateral grains are controlled by the angular points of the diagram.

Pulsed Excimer Laser Crystallization of Evaporated Amorphous Silicon Films. The Role of SiO2 Underlayer Thickness

1996 ◽  
Vol 154 (2) ◽  
pp. 647-656
Author(s):  
S. Luby ◽  
M. Jergel ◽  
E. Majkova ◽  
E. D'anna ◽  
A. Luches ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization

High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Carluccio ◽  
A. Pecora ◽  
G. Fortunato ◽  
J. Stoemenos ◽  
N. Economou
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Solidification Velocity ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTExcimer laser crystallization of hydrogenated amorphous silicon has been investigated as a function of substrate temperature. At low substrate temperatures hydrogen out-diffusion strongly influences the film morphology, while at 420 °C homogeneous recrystallized films are obtained, as a result of the reduced solidification velocity. This process has been successfully tested by fabricating with the recrystalllized material thin-film transistors according to the bottom-gate configuration.

Single shot excimer laser crystallization of silicon films deposited by LPCVD

1997 ◽  
Vol 296 (1-2) ◽  
pp. 53-56 ◽  
Author(s):  
K. Kis-Sion ◽  
T. Mohammed-Brahim ◽  
D. Briand ◽  
M. Sarret ◽  
F. Lebihan ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Silicon Films ◽  
Single Shot ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization
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