Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films

1993 ◽  
Vol 63 (14) ◽  
pp. 1969-1971 ◽  
Author(s):  
James S. Im ◽  
H. J. Kim ◽  
Michael O. Thompson
Keyword(s):  
Phase Transformation ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Transformation Mechanisms ◽  
Excimer Laser Crystallization

Pulsed Excimer Laser Crystallization of Evaporated Amorphous Silicon Films. The Role of SiO2 Underlayer Thickness

1996 ◽  
Vol 154 (2) ◽  
pp. 647-656
Author(s):  
S. Luby ◽  
M. Jergel ◽  
E. Majkova ◽  
E. D'anna ◽  
A. Luches ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization

Relationship between fluence gradient and lateral grain growth in spatially controlled excimer laser crystallization of amorphous silicon films

2000 ◽  
Vol 88 (9) ◽  
pp. 4994-4999 ◽  
Author(s):  
Minghong Lee ◽  
Seungjae Moon ◽  
Mutsuko Hatano ◽  
Kenkichi Suzuki ◽  
Costas P. Grigoropoulos
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Excimer Laser ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization

High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Carluccio ◽  
A. Pecora ◽  
G. Fortunato ◽  
J. Stoemenos ◽  
N. Economou
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Solidification Velocity ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTExcimer laser crystallization of hydrogenated amorphous silicon has been investigated as a function of substrate temperature. At low substrate temperatures hydrogen out-diffusion strongly influences the film morphology, while at 420 °C homogeneous recrystallized films are obtained, as a result of the reduced solidification velocity. This process has been successfully tested by fabricating with the recrystalllized material thin-film transistors according to the bottom-gate configuration.

Single shot excimer laser crystallization of silicon films deposited by LPCVD

1997 ◽  
Vol 296 (1-2) ◽  
pp. 53-56 ◽  
Author(s):  
K. Kis-Sion ◽  
T. Mohammed-Brahim ◽  
D. Briand ◽  
M. Sarret ◽  
F. Lebihan ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Silicon Films ◽  
Single Shot ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization
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