Temperature dependence of low-frequency noise in Al–Al2O3–Al single-electron transistors

2000 ◽  
Vol 88 (11) ◽  
pp. 6536-6540 ◽  
Author(s):  
M. Kenyon ◽  
C. J. Lobb ◽  
F. C. Wellstood
Keyword(s):  
Temperature Dependence ◽  
Low Frequency ◽  
Single Electron ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Single Electron Transistors ◽  
Electron Transistors

Low-frequency charge noise in suspended aluminum single-electron transistors

2007 ◽  
Vol 91 (3) ◽  
pp. 033107 ◽  
Author(s):  
T. F. Li ◽  
Yu. A. Pashkin ◽  
O. Astafiev ◽  
Y. Nakamura ◽  
J. S. Tsai ◽  
...  
Keyword(s):  
Low Frequency ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors ◽  
Charge Noise

1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

2000 ◽  
Vol 14 (07) ◽  
pp. 751-760 ◽  
Author(s):  
F. V. GASPARYAN ◽  
S. V. MELKONYAN ◽  
V. M. AROUTIOUNYAN ◽  
H. V. ASRIYAN
Keyword(s):  
Experimental Data ◽  
Spectral Density ◽  
Temperature Dependence ◽  
Conduction Electron ◽  
Optical Phonon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Analytical Expressions

The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron–optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.

Temperature Chaos and the Lattice Character of the Hooge Parameter in Semiconductors

1998 ◽  
Vol 12 (29n30) ◽  
pp. 1245-1254 ◽  
Author(s):  
S. V. Melkonyan ◽  
F. V. Gasparyan ◽  
V. M. Aroutiouyan ◽  
H. V. Asriyan
Keyword(s):  
Temperature Dependence ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Phonon Interaction ◽  
Scattering Mechanisms ◽  
Electron Phonon Interaction

The influence of the electron–phonon interaction on formation of the low-frequency noise in semiconductors is theoretically considered. The determining role of scattering mechanisms in formation of the 1/f low frequency noise is shown. The temperature dependence of the Hooge parameter αH is revealed and explained. The lattice character of αH is proven.

Temperature dependence of conduction and low frequency noise characteristics in GaN Schottky barrier diodes

2020 ◽  
pp. 2150134
Author(s):  
Ya-Yi Chen ◽  
Yuan Liu ◽  
Yuan Ren ◽  
Zhao-Hui Wu ◽  
Li Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Flicker Noise ◽  
Forward Bias ◽  
Low Frequency ◽  
Frequency Noise ◽  
Schottky Barrier Diodes ◽  
Low Frequency Noise ◽  
Zero Bias ◽  
Noise Characteristics

In this paper, the forward bias conduction and low frequency noise (LFN) characteristics of GaN Schottky barrier diodes (SBDs) have been measured and studied in the temperature range from 300 K to 450 K. Based on I–V measured results, the temperature dependence of ideality factor and zero bias Schottky barrier height reveals the inhomogeneities of Schottky barriers at the metal-semiconductor (MS) interface. Further study of the LFN measured results shows that the flicker noise ([Formula: see text] noise) is the main component of LFN in GaN SBDs. The current dependence of LFN indicates the influences of the Schottky barrier and the series resistance on [Formula: see text] noise, and the temperature dependence of LFN is analyzed according to Luo’s model and the barrier inhomogeneities model.

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