Temperature dependence of the low frequency noise in indium arsenide nanowire transistors

2008 ◽  
Vol 93 (20) ◽  
pp. 203503 ◽  
Author(s):  
M. R. Sakr ◽  
X. P. A. Gao
Keyword(s):  
Temperature Dependence ◽  
Indium Arsenide ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Nanowire Transistors

Analysis of the substrate bias effect on the interface trapped charges in junctionless nanowire transistors through low-frequency noise characterization

2017 ◽  
Vol 178 ◽  
pp. 17-20 ◽  
Author(s):  
Rodrigo Trevisoli Doria ◽  
Renan Trevisoli ◽  
Michelly de Souza ◽  
Sylvain Barraud ◽  
Maud Vinet ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Substrate Bias ◽  
Low Frequency Noise ◽  
Bias Effect ◽  
Nanowire Transistors ◽  
Noise Characterization

Low-frequency noise in GaN nanowire transistors

2008 ◽  
Vol 103 (6) ◽  
pp. 064501 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
M. E. Levinshtein ◽  
A. Motayed ◽  
A. V. Davydov
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Nanowire Transistors ◽  
Gan Nanowire

Low-Frequency Noise Contributions From Channel and Contacts in InAs Nanowire Transistors

2013 ◽  
Vol 60 (9) ◽  
pp. 2900-2905 ◽  
Author(s):  
Collin J. Delker ◽  
Yunlong Zi ◽  
Chen Yang ◽  
David B. Janes
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Nanowire Transistors

Modeling the interface traps-related low frequency noise in triple-gate SOI junctionless nanowire transistors

2019 ◽  
Vol 215 ◽  
pp. 111005 ◽  
Author(s):  
Renan Trevisoli ◽  
Rodrigo Trevisoli Doria ◽  
Sylvain Barraud ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Nanowire Transistors

1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

2000 ◽  
Vol 14 (07) ◽  
pp. 751-760 ◽  
Author(s):  
F. V. GASPARYAN ◽  
S. V. MELKONYAN ◽  
V. M. AROUTIOUNYAN ◽  
H. V. ASRIYAN
Keyword(s):  
Experimental Data ◽  
Spectral Density ◽  
Temperature Dependence ◽  
Conduction Electron ◽  
Optical Phonon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Analytical Expressions

The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron–optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.

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