Temperature dependence and electrical properties of dominant low-frequency noise source in SiGe HBT

2000 ◽  
Vol 47 (5) ◽  
pp. 1107-1112 ◽  
Author(s):  
S. Bruce ◽  
K.J. Vandamme ◽  
A. Rydberg
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Noise Source ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Sige Hbt

Investigating the differences in low-frequency noise behavior of npn and pnp SiGe HBTs fabricated in a complementary SiGe HBT BiCMOS on SOI technology

2005 ◽  
Author(s):  
Enhai Zhao ◽  
Ramkumar Krithivasan ◽  
Akil K. Sutton ◽  
Zhenrong Jin ◽  
John D. Cressler ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Sige Hbt ◽  
Soi Technology

scholarly journals Factors influencing low-frequency noise reduction in typical Chinese dwelling layouts

2020 ◽  
pp. 146134842094297
Author(s):  
Yang Song ◽  
Jian Kang
Keyword(s):  
Noise Reduction ◽  
Noise Exposure ◽  
Noise Source ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Frequencies ◽  
Factors Influencing ◽  
Polyline Distance

Existing approaches to reducing the low-frequency noise exposure of dwellings are not always sufficient. This study investigated the significance of dwelling layout design for low-frequency noise control. The sound distribution in six typical Chinese dwelling layouts was analysed using in-situ measurements under steady-state noise of various low frequencies. The results showed that among two-bedroom dwelling layouts, the overall average noise reduction varied considerably (6 dB). The noise reduction for room levels (number of rooms sound crosses) 1–2 and 2–3 varies by 5 and 3 dB, respectively, and the noise reduction at door openings varies by 5 dB. A model to approximate the low-frequency noise reduction of a layout was developed using the polyline distance from the noise source and the number of walls the polyline has to cross, which were clearly shown to influence low-frequency noise reduction and seem to be the strongest investigated factors.

1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

2000 ◽  
Vol 14 (07) ◽  
pp. 751-760 ◽  
Author(s):  
F. V. GASPARYAN ◽  
S. V. MELKONYAN ◽  
V. M. AROUTIOUNYAN ◽  
H. V. ASRIYAN
Keyword(s):  
Experimental Data ◽  
Spectral Density ◽  
Temperature Dependence ◽  
Conduction Electron ◽  
Optical Phonon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Analytical Expressions

The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron–optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.

Temperature Chaos and the Lattice Character of the Hooge Parameter in Semiconductors

1998 ◽  
Vol 12 (29n30) ◽  
pp. 1245-1254 ◽  
Author(s):  
S. V. Melkonyan ◽  
F. V. Gasparyan ◽  
V. M. Aroutiouyan ◽  
H. V. Asriyan
Keyword(s):  
Temperature Dependence ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Phonon Interaction ◽  
Scattering Mechanisms ◽  
Electron Phonon Interaction

The influence of the electron–phonon interaction on formation of the low-frequency noise in semiconductors is theoretically considered. The determining role of scattering mechanisms in formation of the 1/f low frequency noise is shown. The temperature dependence of the Hooge parameter αH is revealed and explained. The lattice character of αH is proven.

Low Frequency Noise Emitted from a Shake-Out Machine

1982 ◽  
Vol 1 (2) ◽  
pp. 73-78
Author(s):  
T. Nakashio ◽  
K. Higaki ◽  
I. Oshita
Keyword(s):  
Noise Reduction ◽  
Rotational Speed ◽  
Noise Source ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

The propagation of low frequency noise from a shake-out machine has been investigated. It was shown that the primary noise source was in the rotation of the imbalanced mass and noise reduction was achieved by reducing the rotational speed.

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