Temperature-dependent carrier trapping processes in short period quantum wire superlattices grown by flow rate modulation epitaxy

2000 ◽  
Vol 77 (10) ◽  
pp. 1481-1483 ◽  
Author(s):  
X. Q. Liu ◽  
A. Sasaki ◽  
N. Ohno ◽  
Xue-Lun Wang ◽  
Mutsuo Ogura
Keyword(s):  
Flow Rate ◽  
Quantum Wire ◽  
Temperature Dependent ◽  
Carrier Trapping ◽  
Rate Modulation ◽  
Short Period

AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy

1999 ◽  
Vol 35 (8) ◽  
pp. 639 ◽  
Author(s):  
T.G. Kim ◽  
X.-L. Wang ◽  
K. Komori ◽  
K. Hikosaka ◽  
M. Ogura
Keyword(s):  
Flow Rate ◽  
Quantum Wire ◽  
Rate Modulation

On-Line Monitoring System for Monitoring SO2 in Fumes (1) — Monitoring Subsystem for SO2 Mass Concentration

2011 ◽  
Vol 422 ◽  
pp. 296-299
Author(s):  
Shi Long Wang ◽  
Li Na Wang ◽  
Hong Bo Wang ◽  
Yong Hui Cai
Keyword(s):  
Flow Velocity ◽  
Monitoring System ◽  
Flow Rate ◽  
Mass Concentration ◽  
National Monitoring ◽  
Monitoring Result ◽  
Short Period ◽  
On Line ◽  
Working Principle

In order to achieve the target of controlling SO2 emissions in fumes in a short period of time in China, a SO2 on-line monitoring system (CEMS) has been developed by the authorased on the principle of electrochemistry. This system consists of two subsystems: (1) SO2 mass concentration monitoring and (2) SO2 flow velocity and flow rate monitoring. In the paper, the procedure of system and working principle and method of SO2 mass concentration monitoring subsystem are described in detail (SO2 flow velocity and flow rate monitoring subsystem is described by another paper).Two subsystems work synchronously to monitor and calculate the SO2 emissions, then the on-line monitoring of SO2 emissions is achieved. Through experiment and testing, monitoring result of the system is stable and reliable, which has reached the national monitoring standards and passed the appraisal.

Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

1987 ◽  
Vol 50 (20) ◽  
pp. 1435-1437 ◽  
Author(s):  
Naoki Kobayashi ◽  
Toshiki Makimoto ◽  
Yoshiji Horikoshi
Keyword(s):  
Flow Rate ◽  
Atomic Layer ◽  
Doping Profile ◽  
Rate Modulation

scholarly journals Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure

2001 ◽  
Vol 90 (10) ◽  
pp. 5438-5440 ◽  
Author(s):  
X. Q. Liu ◽  
A. Sasaki ◽  
N. Ohno ◽  
Z. F. Li ◽  
W. Lu ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Blocking Effect ◽  
Carrier Trapping ◽  
Trapping Process

A short-period GaAs-AlGaAs quantum-wire array laser with a submicrometer current blocking layer

1997 ◽  
Vol 9 (1) ◽  
pp. 2-4 ◽  
Author(s):  
Tae-Geun Kim ◽  
Kyung-Hyun Park ◽  
Eun Kyu Kim ◽  
Suk-Ki Min ◽  
Jung-Ho Park
Keyword(s):  
Quantum Wire ◽  
Wire Array ◽  
Blocking Layer ◽  
Short Period ◽  
Current Blocking Layer ◽  
Current Blocking
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