scholarly journals Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure

2001 ◽  
Vol 90 (10) ◽  
pp. 5438-5440 ◽  
Author(s):  
X. Q. Liu ◽  
A. Sasaki ◽  
N. Ohno ◽  
Z. F. Li ◽  
W. Lu ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Blocking Effect ◽  
Carrier Trapping ◽  
Trapping Process

High responsivity ultraviolet photodetector realized via a carrier-trapping process

2010 ◽  
Vol 97 (25) ◽  
pp. 251102 ◽  
Author(s):  
J. S. Liu ◽  
C. X. Shan ◽  
B. H. Li ◽  
Z. Z. Zhang ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Carrier Trapping ◽  
High Responsivity ◽  
Trapping Process

Temperature-dependent carrier trapping processes in short period quantum wire superlattices grown by flow rate modulation epitaxy

2000 ◽  
Vol 77 (10) ◽  
pp. 1481-1483 ◽  
Author(s):  
X. Q. Liu ◽  
A. Sasaki ◽  
N. Ohno ◽  
Xue-Lun Wang ◽  
Mutsuo Ogura
Keyword(s):  
Flow Rate ◽  
Quantum Wire ◽  
Temperature Dependent ◽  
Carrier Trapping ◽  
Rate Modulation ◽  
Short Period

The role of vertical quantum wells in carrier trapping in v‐groove quantum wire lasers

1996 ◽  
Vol 68 (15) ◽  
pp. 2061-2063 ◽  
Author(s):  
C. Kiener ◽  
L. Rota ◽  
A. C. Maciel ◽  
J. M. Freyland ◽  
J. F. Ryan
Keyword(s):  
Quantum Wells ◽  
Quantum Wire ◽  
Carrier Trapping

Direct Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar Cells

2013 ◽  
Vol 205-206 ◽  
pp. 40-46 ◽  
Author(s):  
Yutaka Yoshida ◽  
Yoshinori Tsukamoto ◽  
Masahiro Ichino ◽  
Kiyotaka Tanaka
Keyword(s):  
Solar Cells ◽  
Cross Sections ◽  
Light Illumination ◽  
Carrier Trapping ◽  
Si Solar Cells ◽  
Solute Atoms ◽  
Dynamical Charge ◽  
Trapping Process ◽  
Fe Implantation ◽  
Fe Impurities

n-situ Mössbauer studies on 57Fe solute atoms in Si solar cells are performed: (1) GeV-57Mn/57Fe implantation into Si solar cells, (2) 57Fe diffused n-type Si under light illumination; (3) 57Fe diffused solar cells under applying external voltages. The carrier trapping cross sections for the interstitial components with different charge states, Fei+ and Fei2+, can be successfully obtained by evaluating the dynamical charge fluctuations within a time scale of 100ns between Fei+ and Fei2+ which appear in the Mössbauer spectra of 57Fe doped mc-Si solar cells. We further measure the distributions of Fei+ and Fei2+ by a Mössbauer Microscope, which we have been developing. The present results provide us a possibility to clarify the carrier trapping process on an atomistic scale directly on the Fe impurities in Si-solar cells.

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

PLASMA CORTICOSTEROID LEVELS AND ADRENAL ASCORBIC ACID AFTER INTRAVENOUS CORTICOTROPHIN INJECTIONS AND »STRESSFUL« STIMULI IN THE RAT

1962 ◽  
Vol 39 (4) ◽  
pp. 527-538 ◽  
Author(s):  
Pavo Hedner ◽  
Claus Rerup
Keyword(s):  
Ascorbic Acid ◽  
Abdominal Surgery ◽  
Response Curve ◽  
Significant Rise ◽  
Blocking Effect ◽  
High Dose ◽  
Ascorbic Acid Concentration ◽  
Unilateral Adrenalectomy ◽  
Subcutaneous Injections ◽  
Hypophysectomized Rats

ABSTRACT Measurements of plasma corticosteroid levels and adrenal ascorbic acid concentration in steroid blocked and hypophysectomized rats were performed. It was found that prednisolone and dexamethasone were effective in blocking endogenous corticotrophin release within 3–4 hours after subcutaneous injection. These agents also prevented completely the normally occurring rise in plasma corticoid levels after exposure of the rats to ether. Abdominal surgery (unilateral adrenalectomy) resulted in a slight but significant rise in plasma corticoid levels in spite of dexamethasone blockade. The values of adrenal ascorbic acid were not affected significantly. The blocking effect of two daily subcutaneous injections of a high dose of dexamethasone persisted for about one week after the last injection. The sensitivity of the plasma corticoid response was essentially the same in hypophysectomized and dexamethasone blocked rats. The lower part of the log dose response curve was found to be clearly non-linear in the plasma corticoid method following intravenous corticotrophin injection. As a consequence the dose level in quantitative assays of intravenously injected corticotrophin are, in our hands, of the same order as in the adrenal ascorbic acid depletion method.

Coherent Control of Semiconductor Quantum Wire by High-Resolution and Stable Michelson Interferometer

2008 ◽  
Vol 128 (6) ◽  
pp. 285-291
Author(s):  
Takumi Okada ◽  
Kazuhiro Komori ◽  
Xue-Lun Wang ◽  
Mutsuo Ogura ◽  
Noriaki Tsurumachi
Keyword(s):  
High Resolution ◽  
Quantum Wire ◽  
Coherent Control ◽  
Michelson Interferometer
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