AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy

1999 ◽  
Vol 35 (8) ◽  
pp. 639 ◽  
Author(s):  
T.G. Kim ◽  
X.-L. Wang ◽  
K. Komori ◽  
K. Hikosaka ◽  
M. Ogura
Keyword(s):  
Flow Rate ◽  
Quantum Wire ◽  
Rate Modulation

Temperature-dependent carrier trapping processes in short period quantum wire superlattices grown by flow rate modulation epitaxy

2000 ◽  
Vol 77 (10) ◽  
pp. 1481-1483 ◽  
Author(s):  
X. Q. Liu ◽  
A. Sasaki ◽  
N. Ohno ◽  
Xue-Lun Wang ◽  
Mutsuo Ogura
Keyword(s):  
Flow Rate ◽  
Quantum Wire ◽  
Temperature Dependent ◽  
Carrier Trapping ◽  
Rate Modulation ◽  
Short Period

Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

1987 ◽  
Vol 50 (20) ◽  
pp. 1435-1437 ◽  
Author(s):  
Naoki Kobayashi ◽  
Toshiki Makimoto ◽  
Yoshiji Horikoshi
Keyword(s):  
Flow Rate ◽  
Atomic Layer ◽  
Doping Profile ◽  
Rate Modulation

Hexagonal facet laser with optical waveguides grown by flow-rate modulation epitaxy

1997 ◽  
Vol 170 (1-4) ◽  
pp. 719-724 ◽  
Author(s):  
S. Ando ◽  
N. Kobayashi ◽  
H. Ando ◽  
Y. Horikoshi
Keyword(s):  
Flow Rate ◽  
Optical Waveguides ◽  
Rate Modulation

A new flow-injection chromatography method exploiting linear-gradient elution for fast quantitative screening of parabens in cosmetics

2016 ◽  
Vol 8 (47) ◽  
pp. 8337-8344 ◽  
Author(s):  
Margarita Barbatsi ◽  
Michael Koupparis ◽  
Anastasios Economou
Keyword(s):  
Flow Rate ◽  
Flow Injection ◽  
Gradient Elution ◽  
Chromatography Method ◽  
Linear Gradient ◽  
Rate Modulation ◽  
Quantitative Screening

Linear gradient elution flow injection chromatography with flow rate modulation was used for the determination of 4 parabens.

Flow-rate modulation epitaxy of wurtzite AlBN

2005 ◽  
Author(s):  
Tetsuya Akasaka ◽  
Toshiki Makimoto
Keyword(s):  
Flow Rate ◽  
Rate Modulation
Sign in / Sign up

Export Citation Format

Share Document