Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

1987 ◽  
Vol 50 (20) ◽  
pp. 1435-1437 ◽  
Author(s):  
Naoki Kobayashi ◽  
Toshiki Makimoto ◽  
Yoshiji Horikoshi
Keyword(s):  
Flow Rate ◽  
Atomic Layer ◽  
Doping Profile ◽  
Rate Modulation

Hexagonal facet laser with optical waveguides grown by flow-rate modulation epitaxy

1997 ◽  
Vol 170 (1-4) ◽  
pp. 719-724 ◽  
Author(s):  
S. Ando ◽  
N. Kobayashi ◽  
H. Ando ◽  
Y. Horikoshi
Keyword(s):  
Flow Rate ◽  
Optical Waveguides ◽  
Rate Modulation

Suppression of substrate oxidation during ozone based atomic layer deposition of Al2O3: Effect of ozone flow rate

2010 ◽  
Vol 97 (16) ◽  
pp. 162903 ◽  
Author(s):  
Jinhee Kwon ◽  
Min Dai ◽  
Mathew D. Halls ◽  
Yves. J. Chabal
Keyword(s):  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Atomic Layer ◽  
Substrate Oxidation ◽  
Layer Deposition

A new flow-injection chromatography method exploiting linear-gradient elution for fast quantitative screening of parabens in cosmetics

2016 ◽  
Vol 8 (47) ◽  
pp. 8337-8344 ◽  
Author(s):  
Margarita Barbatsi ◽  
Michael Koupparis ◽  
Anastasios Economou
Keyword(s):  
Flow Rate ◽  
Flow Injection ◽  
Gradient Elution ◽  
Chromatography Method ◽  
Linear Gradient ◽  
Rate Modulation ◽  
Quantitative Screening

Linear gradient elution flow injection chromatography with flow rate modulation was used for the determination of 4 parabens.

Flow-rate modulation epitaxy of wurtzite AlBN

2005 ◽  
Author(s):  
Tetsuya Akasaka ◽  
Toshiki Makimoto
Keyword(s):  
Flow Rate ◽  
Rate Modulation

Improved size control of InP nanopyramids by selective-area flow rate modulation epitaxy

2002 ◽  
Vol 237-239 ◽  
pp. 239-243 ◽  
Author(s):  
R. Oga ◽  
S. Yamamoto ◽  
I. Ohzawa ◽  
Y. Fujiwara ◽  
Y. Takeda
Keyword(s):  
Flow Rate ◽  
Size Control ◽  
Rate Modulation ◽  
Selective Area

High Quality InP Epitaxial Growth Using Flow Rate Modulation Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 08 (04) ◽  
pp. 575-586
Author(s):  
M. K. Lee ◽  
C. C. Hu
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Atomic Scale ◽  
Optimum Growth ◽  
Rate Modulation ◽  
Metalorganic Chemical

The characteristics of modified flow rate modulation metalorganic chemical deposition is studied. From observation with the atomic force microscope, the flatness of a InP homoepitaxial layer is improved to atomic scale by phosphine modulation metalorganic chemical vapor deposition. The full width at half maximum 5.6 meV of photoluminescence at 77 K can be achieved under optimum growth conditions. The satellite peak around the near band emission can also be reduced to a negligible quantity under optimum growth conditions. Also, MFME can improve the electrical characteristics of the epilayer with higher electron mobility and lower compensation ratio.

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