Luminescence energy shift and carrier lifetime change dependence on carrier density in In0.12Ga0.88N/In0.03Ga0.97N quantum wells

2000 ◽  
Vol 76 (25) ◽  
pp. 3753-3755 ◽  
Author(s):  
Takamasa Kuroda ◽  
Atsushi Tackeuchi ◽  
Takayuki Sota
Keyword(s):  
Quantum Wells ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Energy Shift

ALL-OPTICAL ASYMMETRIC FABRY-PEROT REFLECTION MODULATORS

1993 ◽  
Vol 02 (03) ◽  
pp. 391-399 ◽  
Author(s):  
T. OHTSUKI ◽  
M.F. KROL ◽  
G. KHITROVA ◽  
R. JIN ◽  
R.K. BONCEK ◽  
...  
Keyword(s):  
Response Time ◽  
Quantum Wells ◽  
Insertion Loss ◽  
Pump Beam ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Contrast Ratio ◽  
Operating Conditions ◽  
Fabry Perot ◽  
All Optical

Operating conditions of all-optical asymmetric Fabry-Perot modulators are discussed based on the experimental results of two modulators with different nonlinear spacers of GaAlInAs/AlInAs and strained-layer InGaAs/GaAs multi-quantum wells. These modulators operate at wavelengths of 1.3 and 0.92 µm, and offer an on/off contrast ratio of greater than 1000:1. An “on” state with an insertion loss of 2.2 dB existed for pump intensities of 30 kW/cm 2 and 3 kW/cm 2, respectively. The corresponding carrier densities for these pump intensities are approximately the same, at 4×1017 cm –3. The switching pump beam intensity of the modulator and its response time are analyzed in terms of saturation carrier density and carrier lifetime of the nonlinear spacer material. Requirements for the nonlinear spacer material and device parameters are discussed for low power and fast modulators.

Carrier Lifetime Measurements by Photoconductance at Low Temperature on Passivated Crystalline Silicon Wafers

2013 ◽  
Vol 1536 ◽  
pp. 119-125 ◽  
Author(s):  
Guillaume Courtois ◽  
Bastien Bruneau ◽  
Igor P. Sobkowicz ◽  
Antoine Salomon ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Doping Density ◽  
Lifetime Measurements ◽  
Effective Lifetime

ABSTRACTWe propose an implementation of the PCD technique to minority carrier effective lifetime assessment in crystalline silicon at 77K. We focus here on (n)-type, FZ, polished wafers passivated by a-Si:H deposited by PECVD at 200°C. The samples were immersed into liquid N2 contained in a beaker placed on a Sinton lifetime tester. Prior to be converted into lifetimes, data were corrected for the height shift induced by the beaker. One issue lied in obtaining the sum of carrier mobilities at 77K. From dark conductance measurements performed on the lifetime tester, we extracted an electron mobility of 1.1x104 cm².V-1.s-1 at 77K, the doping density being independently calculated in order to account for the freezing effect of dopants. This way, we could obtain lifetime curves with respect to the carrier density. Effective lifetimes obtained at 77K proved to be significantly lower than at RT and not to depend upon the doping of the a-Si:H layers. We were also able to experimentally verify the expected rise in the implied Voc, which, on symmetrically passivated wafers, went up from 0.72V at RT to 1.04V at 77K under 1 sun equivalent illumination.

scholarly journals Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature

1999 ◽  
Vol 74 (22) ◽  
pp. 3359-3361 ◽  
Author(s):  
C. Jordan ◽  
J. F. Donegan ◽  
J. Hegarty ◽  
B. J. Roycroft ◽  
S. Taniguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Carrier Density ◽  
Room Temperature

Well-width-dependent carrier lifetime in AlGaN∕AlGaN quantum wells

2007 ◽  
Vol 90 (13) ◽  
pp. 131907 ◽  
Author(s):  
J. Mickevičius ◽  
G. Tamulaitis ◽  
E. Kuokštis ◽  
K. Liu ◽  
M. S. Shur ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime

Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain

2003 ◽  
Vol 94 (7) ◽  
pp. 4520-4529 ◽  
Author(s):  
N. A. Shapiro ◽  
H. Feick ◽  
W. Hong ◽  
M. Cich ◽  
R. Armitage ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime ◽  
Biaxial Strain

Interface and Luminescence Properties of Pulsed Laser Deposited MgxZn1-xO/ZnO Quantum Wells with Strong Confinement

2006 ◽  
Vol 957 ◽  
Author(s):  
Susanne Heitsch ◽  
Gregor Zimmermann ◽  
Alexander Müller ◽  
Jörg Lenzner ◽  
Holger Hochmuth ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Pulsed Laser ◽  
Energy Shift ◽  
High Energy ◽  
Interface Roughness ◽  
Force Microscopy ◽  
Quantum Confined Stark Effect ◽  
Barrier Layers ◽  
Atomic Force

ABSTRACTMgxZn1-xO/ZnO/MgxZn1-xO quantum wells (QWs) (0.12 ≤ x ≤ 0.15) have been grown on a-plane sapphire substrates by pulsed laser deposition. The nominal ZnO well layer thickness lies between 1.2 nm and 6 nm. Atomic force microscopy (AFM) investigations at ZnO/MgxZn1−xO heterostructures show the film-like structure of the ZnO layers. Their root mean square surface roughness of ∼ 0.5 nm gives information about the interface roughness in the QWs. AFM results from the MgxZn1−xO barrier layers show the same surface structure and roughness. We confirmed the lateral homogeneity of the Mg distribution in the MgxZn1−xO barrier layers by scanning cathodoluminescence measurements. The QWs show a bright and laterally homogeneous luminescence, suggesting good crystalline quality of the ZnO wells. The measured QW photoluminescence energies agree well with calculated values and display the presence of the quantum-confined Stark effect. As a result of quantum confinement a high-energy shift of the ZnO excitonic photoluminescence of 222 meV is observed in the thinnest QW.

Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

2015 ◽  
Vol 118 (17) ◽  
pp. 175702 ◽  
Author(s):  
N. Shimosako ◽  
Y. Inose ◽  
H. Satoh ◽  
K. Kinjo ◽  
T. Nakaoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Wells ◽  
Density Dependence ◽  
Carrier Density ◽  
Localized States
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