Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain

2003 ◽  
Vol 94 (7) ◽  
pp. 4520-4529 ◽  
Author(s):  
N. A. Shapiro ◽  
H. Feick ◽  
W. Hong ◽  
M. Cich ◽  
R. Armitage ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime ◽  
Biaxial Strain

Valence band anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain

2004 ◽  
Vol 1 (3) ◽  
pp. 547-550 ◽  
Author(s):  
P. F. Gomes ◽  
M. P. F. Godoy ◽  
M. K. K. Nakaema ◽  
F. Iikawa ◽  
T. E. Lamas ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Biaxial Strain

Well-width-dependent carrier lifetime in AlGaN∕AlGaN quantum wells

2007 ◽  
Vol 90 (13) ◽  
pp. 131907 ◽  
Author(s):  
J. Mickevičius ◽  
G. Tamulaitis ◽  
E. Kuokštis ◽  
K. Liu ◽  
M. S. Shur ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime

Electronic structure of (1 1 3)-grown GaAs-(GaAl)As single quantum wells under biaxial strain fields

1990 ◽  
Vol 75 (8) ◽  
pp. 677-682 ◽  
Author(s):  
Y.El Khalifi ◽  
P. Lefebvre ◽  
J. Allègre ◽  
B. Gil ◽  
H. Mathieu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Quantum Wells ◽  
Biaxial Strain ◽  
Single Quantum ◽  
Strain Fields

Intrasubband scattering in highly excited semiconductor quantum wells with biaxial strain

1994 ◽  
Vol 50 (3) ◽  
pp. 1663-1670 ◽  
Author(s):  
Shunji Seki ◽  
Kiyoyuki Yokoyama ◽  
Paul Sotirelis
Keyword(s):  
Quantum Wells ◽  
Biaxial Strain ◽  
Semiconductor Quantum Wells

Carrier lifetime saturation in InGaAs single quantum wells

1995 ◽  
Vol 66 (20) ◽  
pp. 2730-2732 ◽  
Author(s):  
Andrew P. Ongstad ◽  
David J. Gallant ◽  
Gregory C. Dente
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime ◽  
Single Quantum

Influence of barrier height on carrier lifetime inGa1−yInyP/(AlxGa1−x)1−yInyP single quantum wells

1992 ◽  
Vol 46 (11) ◽  
pp. 7280-7283 ◽  
Author(s):  
P. Michler ◽  
A. Hangleiter ◽  
M. Moser ◽  
M. Geiger ◽  
F. Scholz
Keyword(s):  
Quantum Wells ◽  
Barrier Height ◽  
Carrier Lifetime ◽  
Single Quantum

ALL-OPTICAL ASYMMETRIC FABRY-PEROT REFLECTION MODULATORS

1993 ◽  
Vol 02 (03) ◽  
pp. 391-399 ◽  
Author(s):  
T. OHTSUKI ◽  
M.F. KROL ◽  
G. KHITROVA ◽  
R. JIN ◽  
R.K. BONCEK ◽  
...  
Keyword(s):  
Response Time ◽  
Quantum Wells ◽  
Insertion Loss ◽  
Pump Beam ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Contrast Ratio ◽  
Operating Conditions ◽  
Fabry Perot ◽  
All Optical

Operating conditions of all-optical asymmetric Fabry-Perot modulators are discussed based on the experimental results of two modulators with different nonlinear spacers of GaAlInAs/AlInAs and strained-layer InGaAs/GaAs multi-quantum wells. These modulators operate at wavelengths of 1.3 and 0.92 µm, and offer an on/off contrast ratio of greater than 1000:1. An “on” state with an insertion loss of 2.2 dB existed for pump intensities of 30 kW/cm 2 and 3 kW/cm 2, respectively. The corresponding carrier densities for these pump intensities are approximately the same, at 4×1017 cm –3. The switching pump beam intensity of the modulator and its response time are analyzed in terms of saturation carrier density and carrier lifetime of the nonlinear spacer material. Requirements for the nonlinear spacer material and device parameters are discussed for low power and fast modulators.

Ambipolar diffusion and carrier lifetime measurements in all‐binary (InAs)2(GaAs)5strained quantum wells grown on GaAs

1993 ◽  
Vol 74 (3) ◽  
pp. 1868-1873 ◽  
Author(s):  
X. R. Huang ◽  
D. S. McCallum ◽  
Martin D. Dawson ◽  
Arthur L. Smirl ◽  
Thomas F. Boggess ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime ◽  
Ambipolar Diffusion ◽  
Lifetime Measurements
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