Well-width-dependent carrier lifetime in AlGaN∕AlGaN quantum wells

2007 ◽  
Vol 90 (13) ◽  
pp. 131907 ◽  
Author(s):  
J. Mickevičius ◽  
G. Tamulaitis ◽  
E. Kuokštis ◽  
K. Liu ◽  
M. S. Shur ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime

Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain

2003 ◽  
Vol 94 (7) ◽  
pp. 4520-4529 ◽  
Author(s):  
N. A. Shapiro ◽  
H. Feick ◽  
W. Hong ◽  
M. Cich ◽  
R. Armitage ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime ◽  
Biaxial Strain

Carrier lifetime saturation in InGaAs single quantum wells

1995 ◽  
Vol 66 (20) ◽  
pp. 2730-2732 ◽  
Author(s):  
Andrew P. Ongstad ◽  
David J. Gallant ◽  
Gregory C. Dente
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime ◽  
Single Quantum

Influence of barrier height on carrier lifetime inGa1−yInyP/(AlxGa1−x)1−yInyP single quantum wells

1992 ◽  
Vol 46 (11) ◽  
pp. 7280-7283 ◽  
Author(s):  
P. Michler ◽  
A. Hangleiter ◽  
M. Moser ◽  
M. Geiger ◽  
F. Scholz
Keyword(s):  
Quantum Wells ◽  
Barrier Height ◽  
Carrier Lifetime ◽  
Single Quantum

ALL-OPTICAL ASYMMETRIC FABRY-PEROT REFLECTION MODULATORS

1993 ◽  
Vol 02 (03) ◽  
pp. 391-399 ◽  
Author(s):  
T. OHTSUKI ◽  
M.F. KROL ◽  
G. KHITROVA ◽  
R. JIN ◽  
R.K. BONCEK ◽  
...  
Keyword(s):  
Response Time ◽  
Quantum Wells ◽  
Insertion Loss ◽  
Pump Beam ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Contrast Ratio ◽  
Operating Conditions ◽  
Fabry Perot ◽  
All Optical

Operating conditions of all-optical asymmetric Fabry-Perot modulators are discussed based on the experimental results of two modulators with different nonlinear spacers of GaAlInAs/AlInAs and strained-layer InGaAs/GaAs multi-quantum wells. These modulators operate at wavelengths of 1.3 and 0.92 µm, and offer an on/off contrast ratio of greater than 1000:1. An “on” state with an insertion loss of 2.2 dB existed for pump intensities of 30 kW/cm 2 and 3 kW/cm 2, respectively. The corresponding carrier densities for these pump intensities are approximately the same, at 4×1017 cm –3. The switching pump beam intensity of the modulator and its response time are analyzed in terms of saturation carrier density and carrier lifetime of the nonlinear spacer material. Requirements for the nonlinear spacer material and device parameters are discussed for low power and fast modulators.

Ambipolar diffusion and carrier lifetime measurements in all‐binary (InAs)2(GaAs)5strained quantum wells grown on GaAs

1993 ◽  
Vol 74 (3) ◽  
pp. 1868-1873 ◽  
Author(s):  
X. R. Huang ◽  
D. S. McCallum ◽  
Martin D. Dawson ◽  
Arthur L. Smirl ◽  
Thomas F. Boggess ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime ◽  
Ambipolar Diffusion ◽  
Lifetime Measurements

Carrier lifetime control in III-V multiple quantum wells

1990 ◽  
Author(s):  
Michael Lynch ◽  
John Hegarty ◽  
A. Ginty ◽  
William M. Kelly
Keyword(s):  
Quantum Wells ◽  
Carrier Lifetime ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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