Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

2000 ◽  
Vol 76 (14) ◽  
pp. 1941-1943 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
A. Chapoton ◽  
D. Vuillaume
Keyword(s):  
Low Voltage ◽  
Channel Length ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Insulating Films ◽  
Self Assembled

Solution Processed Self-Assembled Monolayer Gate Dielectrics for Low-Voltage Organic Transistors

2008 ◽  
Vol 1114 ◽  
Author(s):  
James Ball ◽  
Paul H Wöbkenberg ◽  
Florian Colléaux ◽  
Floris B Kooistra ◽  
Jan C Hummelen ◽  
...  
Keyword(s):  
Surface Energy ◽  
Organic Semiconductors ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
High Volume ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

AbstractLow-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated.

Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics

2009 ◽  
Author(s):  
James M. Ball ◽  
Paul H. Wöbkenberg ◽  
Florian Colléaux ◽  
Jeremy Smith ◽  
Donal D. C. Bradley ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

scholarly journals Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

2008 ◽  
Vol 93 (1) ◽  
pp. 013303 ◽  
Author(s):  
Paul H. Wöbkenberg ◽  
James Ball ◽  
Floris B. Kooistra ◽  
Jan C. Hummelen ◽  
Dago M. de Leeuw ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

Mixed self-assembled monolayer gate dielectrics for low-voltage solution-processed polymer field-effect transistors

2015 ◽  
Vol 3 (6) ◽  
pp. 1181-1186 ◽  
Author(s):  
T. V. A. G. de Oliveira ◽  
A. Eleta ◽  
L. E. Hueso ◽  
A. M. Bittner
Keyword(s):  
Carboxylic Acid ◽  
Phosphonic Acid ◽  
Field Effect ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Carboxylic Acid Groups ◽  
Self Assembled

Highly insulating gate dielectrics based on AlOx and on mixed phosphonic-acid SAMs terminated with methyl/carboxylic acid groups are demonstrated.

scholarly journals Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric

2005 ◽  
Vol 87 (24) ◽  
pp. 243509 ◽  
Author(s):  
Yeong Don Park ◽  
Do Hwan Kim ◽  
Yunseok Jang ◽  
Minkyu Hwang ◽  
Jung Ah Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Self Assembled Monolayer ◽  
Polymer Thin Film ◽  
Self Assembled

Mixed Self-Assembled Monolayer Gate Dielectrics for Continuous Threshold Voltage Control in Organic Transistors and Circuits

2010 ◽  
Vol 22 (40) ◽  
pp. 4489-4493 ◽  
Author(s):  
Ute Zschieschang ◽  
Frederik Ante ◽  
Matthias Schlörholz ◽  
Maike Schmidt ◽  
Klaus Kern ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectrics ◽  
Voltage Control ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics

2012 ◽  
Vol 1451 ◽  
pp. 179-184
Author(s):  
Cecilia Mattevi ◽  
Florian Colléaux ◽  
Hokwon Kim ◽  
Manish Chhowalla ◽  
Thomas D. Anthopoulos
Keyword(s):  
Low Voltage ◽  
Chemical Vapour ◽  
Self Assembled Monolayers ◽  
Operating Voltage ◽  
Self Assembled Monolayer ◽  
Bias Stress ◽  
Operating Stability ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
End Group

ABSTRACTWe demonstrate low operating voltage (<|1.5| V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.

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