scholarly journals Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric

2005 ◽  
Vol 87 (24) ◽  
pp. 243509 ◽  
Author(s):  
Yeong Don Park ◽  
Do Hwan Kim ◽  
Yunseok Jang ◽  
Minkyu Hwang ◽  
Jung Ah Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Self Assembled Monolayer ◽  
Polymer Thin Film ◽  
Self Assembled

scholarly journals Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO2 treated by H3PO4

RSC Advances ◽  
2019 ◽  
Vol 9 (53) ◽  
pp. 30715-30719 ◽  
Author(s):  
Wei Dou ◽  
Yuanyuan Tan
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Self Assembled

Ultralow-voltage (0.8 V) thin-film transistors (TFTs) using self-assembled indium-tin-oxide (ITO) as the semiconducting layer and microporous SiO2 immersed in 5% H3PO4 for 30 minutes with huge electric-double-layer (EDL) capacitance as the gate dielectric are fabricated at room temperature.

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