Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics
Keyword(s):
ABSTRACTWe demonstrate low operating voltage (<|1.5| V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.
1997 ◽
Vol 36
(1-4)
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pp. 119-122
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2018 ◽
Vol 767
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pp. 69-76
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1999 ◽
Vol 77
(5-6)
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pp. 1077-1084
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2007 ◽
Vol 121-123
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pp. 495-498
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