Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

2000 ◽  
Vol 76 (5) ◽  
pp. 574-576 ◽  
Author(s):  
Jian-Yue Jin ◽  
Jiarui Liu ◽  
Paul A. W. van der Heide ◽  
Wei-Kan Chu
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Damage Effect ◽  
Annealing Behavior ◽  
Implantation Damage

Ion-Implantation Getiering of Impurities in CdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
M. H. Jin ◽  
K. M. James ◽  
C. E. Jones ◽  
J. L. Merz
Keyword(s):  
Liquid Phase ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
Annealing Behavior ◽  
Ternary Compounds ◽  
Implantation Damage ◽  
Anneal Time

ABSTRACTThis is the first reported use of ion-implantation damage gettering of impurities in CdTe to provide high-quality substrates for the epitaxial growth of appropriate binary or ternary compounds, or for related applications. We describe the results of photoluminescence (PL) measurements performed on samples of Bridgeman-grown CdTe to study both the annealing behavior and gettering effects in this material. From the PL results, it was found that impurity gettering occurs at temperatures at which liquid phase epitaxy take place (∼500°C) so that these two fabrication procedures are compatible. It was also found that the optimum anneal time at this temperature is four hours.

A study of the ion implantation damage and annealing behavior in GaSb

1996 ◽  
Vol 25 (1) ◽  
pp. 119-124 ◽  
Author(s):  
S. Iyer ◽  
R. Parakkat ◽  
B. Mangalam ◽  
B. Patnaik ◽  
M. Falvo ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Behavior ◽  
Implantation Damage

Determination of Low-Energy Ion Implantation Damage Parameters by an Ellipsometric Method

1995 ◽  
Vol 5 (5) ◽  
pp. 575-584 ◽  
Author(s):  
U. Müller-Jahreis ◽  
P. Thiele ◽  
M. Bouafia ◽  
A. Seghir
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Implantation Damage ◽  
Ellipsometric Method

Ion Implantation Damage and B Diffusion in Low Energy B Implantation with Ge Preimplantation

1995 ◽  
Vol 396 ◽  
Author(s):  
M. Kase ◽  
H. Mori
Keyword(s):  
Ion Implantation ◽  
Diffusion Length ◽  
Solid Phase ◽  
Low Energy ◽  
Solid Phase Epitaxy ◽  
Light Damage ◽  
Sheet Resistivity ◽  
Enhanced Diffusion ◽  
Implantation Damage

AbstractFor low energy B (LEB) implantation into Si, the channeling tail is larger than for BF2+ implantation, so Ge+ preamorphization is expected to provide a shallower junction. We studied the Ge+ and B+ implantation damages and the damage-induced B diffusion. The substrate implanted Ge+ with 2×l014 cm-2, that is, a complete amorphization, retains less residual defects after RTA. However the sheet resistivity (S) is higher than the sample implanted with only LEB. Solid phase epitaxy (SPE) of amorphized layer causes B out-diffusion. The diffusion length of the amorphized substrate is smaller than that of LEB. We expect that the B diffusion is enhanced by the LEB damage, which corresponds to the enhanced diffusion of light damage.

Special Aspects of High-Intensity Low-Energy Ion Implantation

2021 ◽  
Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin
Keyword(s):  
Ion Implantation ◽  
High Intensity ◽  
Low Energy

Big channeling effects at low-energy ion implantation in silicon

1986 ◽  
Vol 97 (2) ◽  
pp. K135-K139 ◽  
Author(s):  
J. Bollmann ◽  
H. Klose ◽  
A. Mertens
Keyword(s):  
Ion Implantation ◽  
Low Energy
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