Determination of Low-Energy Ion Implantation Damage Parameters by an Ellipsometric Method

1995 ◽  
Vol 5 (5) ◽  
pp. 575-584 ◽  
Author(s):  
U. Müller-Jahreis ◽  
P. Thiele ◽  
M. Bouafia ◽  
A. Seghir
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Implantation Damage ◽  
Ellipsometric Method

Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

2000 ◽  
Vol 76 (5) ◽  
pp. 574-576 ◽  
Author(s):  
Jian-Yue Jin ◽  
Jiarui Liu ◽  
Paul A. W. van der Heide ◽  
Wei-Kan Chu
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Damage Effect ◽  
Annealing Behavior ◽  
Implantation Damage

Ion Implantation Damage and B Diffusion in Low Energy B Implantation with Ge Preimplantation

1995 ◽  
Vol 396 ◽  
Author(s):  
M. Kase ◽  
H. Mori
Keyword(s):  
Ion Implantation ◽  
Diffusion Length ◽  
Solid Phase ◽  
Low Energy ◽  
Solid Phase Epitaxy ◽  
Light Damage ◽  
Sheet Resistivity ◽  
Enhanced Diffusion ◽  
Implantation Damage

AbstractFor low energy B (LEB) implantation into Si, the channeling tail is larger than for BF2+ implantation, so Ge+ preamorphization is expected to provide a shallower junction. We studied the Ge+ and B+ implantation damages and the damage-induced B diffusion. The substrate implanted Ge+ with 2×l014 cm-2, that is, a complete amorphization, retains less residual defects after RTA. However the sheet resistivity (S) is higher than the sample implanted with only LEB. Solid phase epitaxy (SPE) of amorphized layer causes B out-diffusion. The diffusion length of the amorphized substrate is smaller than that of LEB. We expect that the B diffusion is enhanced by the LEB damage, which corresponds to the enhanced diffusion of light damage.

Special Aspects of High-Intensity Low-Energy Ion Implantation

2021 ◽  
Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin
Keyword(s):  
Ion Implantation ◽  
High Intensity ◽  
Low Energy

Big channeling effects at low-energy ion implantation in silicon

1986 ◽  
Vol 97 (2) ◽  
pp. K135-K139 ◽  
Author(s):  
J. Bollmann ◽  
H. Klose ◽  
A. Mertens
Keyword(s):  
Ion Implantation ◽  
Low Energy
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