A study of the ion implantation damage and annealing behavior in GaSb

1996 ◽  
Vol 25 (1) ◽  
pp. 119-124 ◽  
Author(s):  
S. Iyer ◽  
R. Parakkat ◽  
B. Mangalam ◽  
B. Patnaik ◽  
M. Falvo ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Behavior ◽  
Implantation Damage

Ion-Implantation Getiering of Impurities in CdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
M. H. Jin ◽  
K. M. James ◽  
C. E. Jones ◽  
J. L. Merz
Keyword(s):  
Liquid Phase ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
Annealing Behavior ◽  
Ternary Compounds ◽  
Implantation Damage ◽  
Anneal Time

ABSTRACTThis is the first reported use of ion-implantation damage gettering of impurities in CdTe to provide high-quality substrates for the epitaxial growth of appropriate binary or ternary compounds, or for related applications. We describe the results of photoluminescence (PL) measurements performed on samples of Bridgeman-grown CdTe to study both the annealing behavior and gettering effects in this material. From the PL results, it was found that impurity gettering occurs at temperatures at which liquid phase epitaxy take place (∼500°C) so that these two fabrication procedures are compatible. It was also found that the optimum anneal time at this temperature is four hours.

Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

2000 ◽  
Vol 76 (5) ◽  
pp. 574-576 ◽  
Author(s):  
Jian-Yue Jin ◽  
Jiarui Liu ◽  
Paul A. W. van der Heide ◽  
Wei-Kan Chu
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Damage Effect ◽  
Annealing Behavior ◽  
Implantation Damage

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

Ion‐implantation‐damage gettering effect in silicon photodiode array camera target

1973 ◽  
Vol 22 (5) ◽  
pp. 238-240 ◽  
Author(s):  
C.M. Hsieh ◽  
J.R. Mathews ◽  
H.D. Seidel ◽  
K.A. Pickar ◽  
C.M. Drum
Keyword(s):  
Ion Implantation ◽  
Silicon Photodiode ◽  
Implantation Damage ◽  
Photodiode Array ◽  
Array Camera

Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EG05 ◽  
Author(s):  
Kenji Shiojima ◽  
Shingo Murase ◽  
Shingo Yamamoto ◽  
Tomoyoshi Mishima ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Schottky Contacts ◽  
Two Dimensional ◽  
Internal Photoemission ◽  
Implantation Damage

Impurity gettering in semi‐insulating gallium arsenide using ion‐implantation damage

1976 ◽  
Vol 29 (11) ◽  
pp. 698-699 ◽  
Author(s):  
C. O. Bozler ◽  
J. P. Donnelly ◽  
W. T. Lindley ◽  
R. A. Reynolds
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Implantation Damage
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