scholarly journals In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

1999 ◽  
Vol 75 (16) ◽  
pp. 2452-2454 ◽  
Author(s):  
S. Lüscher ◽  
A. Fuhrer ◽  
R. Held ◽  
T. Heinzel ◽  
K. Ensslin ◽  
...  
Keyword(s):  
Scanning Probe ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Scanning Probe Lithography

Modeling a radio-frequency single-electron-transistor scanning probe

2014 ◽  
Vol 53 (8) ◽  
pp. 085001 ◽  
Author(s):  
Li Lü ◽  
Lina Su ◽  
Jiandong Sun ◽  
Xinxing Li ◽  
Hua Qin ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Scanning Probe ◽  
Single Electron ◽  
Single Electron Transistor

scholarly journals Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

1999 ◽  
Vol 75 (5) ◽  
pp. 728-730 ◽  
Author(s):  
Leif Roschier ◽  
Jari Penttilä ◽  
Michel Martin ◽  
Pertti Hakonen ◽  
Mikko Paalanen ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Multiwalled Carbon Nanotube ◽  
Scanning Probe ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Multiwalled Carbon

ROOM-TEMPERATURE SINGLE ELECTRON DEVICES BY SCANNING PROBE PROCESS

2000 ◽  
Vol 10 (01) ◽  
pp. 83-91
Author(s):  
KAZUHIKO MATSUMOTO
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Pulse Mode ◽  
Memory Bias ◽  
Scanning Probe ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Coulomb Oscillation ◽  
Single Electron Devices ◽  
Oscillation Characteristics

A single electron transistor (SET) and a single electron memory were fabricated using the improved pulse-mode AFM nano-oxidation process. A single electron transistor which works as an electrometer for detecting the potential of the memory node of the single electron memory showed clear Coulomb oscillation characteristics with the period of 2.1 V at room temperature. A single electron memory exhibited a hysteresis loop as the memory bias was scanned from 0 to 10 V and then back down to 0 V.

A sensitive charge scanning probe based on silicon single electron transistor

2016 ◽  
Vol 37 (4) ◽  
pp. 044008 ◽  
Author(s):  
Lina Su ◽  
Xinxing Li ◽  
Hua Qin ◽  
Xiaofeng Gu
Keyword(s):  
Scanning Probe ◽  
Single Electron ◽  
Single Electron Transistor

Evidence for activated conduction in a single electron transistor

2001 ◽  
Vol 89 (1) ◽  
pp. 410-419 ◽  
Author(s):  
Nicole Y. Morgan ◽  
David Abusch-Magder ◽  
Marc A. Kastner ◽  
Yasuo Takahashi ◽  
Hiroyuki Tamura ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistor

Investigations on the positioning accuracy of the Nano Fabrication Machine (NFM-100)

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Jaqueline Stauffenberg ◽  
Ingo Ortlepp ◽  
Ulrike Blumröder ◽  
Denis Dontsov ◽  
Christoph Schäffel ◽  
...  
Keyword(s):  
Target Position ◽  
Repeated Measurements ◽  
Scanning Probe ◽  
Measuring System ◽  
Direct Drive ◽  
Positioning Accuracy ◽  
Scanning Probe Lithography ◽  
Nano Fabrication ◽  
Atomic Force ◽  
Acceleration And Deceleration

Abstract This contribution deals with the analysis of the positioning accuracy of a new Nano Fabrication Machine. This machine uses a planar direct drive system and has a positioning range up to 100 mm in diameter. The positioning accuracy was investigated in different movement scenarios, including phases of acceleration and deceleration. Also, the target position error of certain movements at different positions of the machine slider is considered. Currently, the NFM-100 is equipped with a tip-based measuring system. This Atomic Force Microscope (AFM) uses self-actuating and self-sensing microcantilevers, which can be used also for Field-Emission-Scanning-Probe-Lithography (FESPL). This process is capable of fabricating structures in the range of nanometres. In combination with the NFM-100 and its positioning range, nanostructures can be analysed and written in a macroscopic range without any tool change. However, the focus in this article is on the measurement and positioning accuracy of the tip-based measuring system in combination with the NFM-100 and is verified by repeated measurements. Finally, a linescan, realised using both systems, is shown over a long range of motion of 30 mm.

The current analysis of a single electron transistor based on double graphene nanoscroll island

2021 ◽  
Vol 327 ◽  
pp. 114234
Author(s):  
Vahideh Khademhosseini ◽  
Daryoosh Dideban ◽  
Mohammad Taghi Ahmadi
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Current Analysis
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