Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulation

1999 ◽  
Vol 74 (2) ◽  
pp. 272-274 ◽  
Author(s):  
M. L. O’Malley ◽  
G. L. Timp ◽  
S. V. Moccio ◽  
J. P. Garno ◽  
R. N. Kleiman
Keyword(s):  
Microscopy Imaging ◽  
Scanning Capacitance Microscopy ◽  
Electrical Simulation ◽  
Pn Junction

Electrical simulation of scanning capacitance microscopy imaging of the pn junction with semiconductor probe tips

1999 ◽  
Vol 74 (24) ◽  
pp. 3672-3674 ◽  
Author(s):  
M. L. O’Malley ◽  
G. L. Timp ◽  
W. Timp ◽  
S. V. Moccio ◽  
J. P. Garno ◽  
...  
Keyword(s):  
Microscopy Imaging ◽  
Scanning Capacitance Microscopy ◽  
Electrical Simulation ◽  
Pn Junction

Contrast reversal in scanning capacitance microscopy imaging

1998 ◽  
Vol 73 (18) ◽  
pp. 2597-2599 ◽  
Author(s):  
Robert Stephenson ◽  
Anne Verhulst ◽  
Peter De Wolf ◽  
Matty Caymax ◽  
Wilfried Vandervorst
Keyword(s):  
Microscopy Imaging ◽  
Scanning Capacitance Microscopy

Effect of surface oxide characteristics on Scanning Capacitance Microscopy Imaging

1999 ◽  
Vol 5 (S2) ◽  
pp. 978-979
Author(s):  
Atul. A. Konkar ◽  
Wei Chen ◽  
Kari Noehring
Keyword(s):  
Differential Capacitance ◽  
Surface Oxide ◽  
Oxide Semiconductor ◽  
Semiconductor Surface ◽  
High Signal ◽  
Contact Mode ◽  
Microscopy Imaging ◽  
Scanning Capacitance Microscopy ◽  
Mos Structure ◽  
The Difference

Scanning capacitance microscopy (SCM) is currently one of the most promising tools for twodimensional carrier profiling. This technique, based upon atomic force microscope (AFM) operated in the contact mode, uses a conductive probe which is scanned over the semiconductor surface. The conductive probe, oxide on the surface of the semiconductor, and the semiconductor substrate form a metal-oxide-semiconductor (MOS) structure. An a.c. bias is applied to the tip and the capacitance of the MOS structure is monitored. The a.c. bias changes the depletion of carriers in the semiconductor and thus the total capacitance of the structure. The maximum capacitance of the MOS structure is obtained when the semiconductor is in accumulation and the total capacitance of the structure is the capacitance of the semiconductor surface oxide. The minimum capacitance is obtained when the semiconductor region under the tip is in inversion. Since SCM the output signal is proportional to the differential capacitance, to get a high signal we need to maximize the difference between the maximum and minimum in the total MOS capacitance.

Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy

2000 ◽  
Vol 77 (1) ◽  
pp. 106-108 ◽  
Author(s):  
G. H. Buh ◽  
H. J. Chung ◽  
C. K. Kim ◽  
J. H. Yi ◽  
I. T. Yoon ◽  
...  
Keyword(s):  
Kelvin Probe Force Microscopy ◽  
Applied Bias ◽  
Kelvin Probe ◽  
Scanning Capacitance Microscopy ◽  
Force Microscopy ◽  
Pn Junction

Low - Voltage Scanning Electron Microscopy Imaging, Secondary and Backscatter, With Microchannel Plate Detector

1990 ◽  
Vol 48 (1) ◽  
pp. 442-442
Author(s):  
Galen Powers ◽  
Ray Cochran
Keyword(s):  
Low Voltage ◽  
Beam Current ◽  
Microchannel Plate ◽  
Normal Operation ◽  
Microscopy Imaging ◽  
Backscatter Signal ◽  
Vacuum Interface ◽  
Width Measurements ◽  
Working Distance ◽  
Beam Currents

The capability to obtain symmetrical images at voltages as low as 200 eV and beam currents less than 9 pico amps is believed to be advantageous for metrology and study of dielectric or biological samples. Symmetrical images should allow more precise and accurate line width measurements than currently achievable by traditional secondary electron detectors. The low voltage and current capability should allow imaging of samples which traditionally have been difficult because of charging or electron beam damage.The detector system consists of a lens mounted dual anode MicroChannel Plate (MCP) detector, vacuum interface, power supplies, and signal conditioning to interface directly to the video card of the SEM. The detector has been miniaturized so that it does not interfere with normal operation of the SEM sample handling and alternate detector operation. Biasing of the detector collection face will either add secondaries to the backscatter signal or reject secondaries yielding only a backscatter image. The dual anode design allows A−B signal processing to provide topological information as well as symmetrical A+B images.Photomicrographs will show some of the system capabilities. Resolution will be documented with gold on carbon. Variation of voltage, beam current, and working distance on dielectric samples such as glass and photoresist will demonstrate effects of common parameter changes.

Sign in / Sign up

Export Citation Format

Share Document