Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition

1998 ◽  
Vol 72 (18) ◽  
pp. 2247-2249 ◽  
Author(s):  
P. J. Hansen ◽  
Y. E. Strausser ◽  
A. N. Erickson ◽  
E. J. Tarsa ◽  
P. Kozodoy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
Microscopy Imaging ◽  
Scanning Capacitance Microscopy ◽  
Metalorganic Chemical

Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 468 ◽  
Author(s):  
Jing-Hong Li ◽  
Olga M. Kryliouk ◽  
Paul H. Holloway ◽  
Timothy J. Anderson ◽  
Kevin S. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Metalorganic Chemical

ABSTRACTMicrostructures of GaN films grown on the LiGaO2 by metalorganic chemical vapor deposition (MOCVD) have been characterized by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). TEM and HRTEM results show that high quality single-crystal wurtzite GaN films have been deposited on the LiGaO2 and that the GaN film and the LiGaO2 have the following orientation relationship: (2110)(0002)GaN ̂ (002)LiGaO2 ^ 5–8°. A higher density of threading dislocations and stacking faults have been observed near the GáN/LiGaO2 interface, even though the lattice mismatch of GaN to LiGaO2 is only ∼1%. Threading dislocations with burgers vector b=<0001> and b=a/3<1120> are predominant in the GaN films. Also the GaN films contain some columnar inversion domain boundaries (IDBs). Both TEM and HRTEM results reveal that there is an unexpected amorphous or nano-crystalline inter-layer between the GaN and the LiGaO2 with a thickness of 50–100 nm.

Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 38 (Part 1, No. 12A) ◽  
pp. 6605-6610 ◽  
Author(s):  
Tadao Hashimoto ◽  
Masaaki Yuri ◽  
Masahiro Ishida ◽  
Yoshitami Terakoshi ◽  
Osamu Imafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threading Dislocations ◽  
Metalorganic Chemical

Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 37 (Part 2, No. 3A) ◽  
pp. L291-L293 ◽  
Author(s):  
Maosheng Hao ◽  
Tomoya Sugahara ◽  
Hisao Sato ◽  
Yoshiyuki Morishima ◽  
Yoshiki Naoi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
Metalorganic Chemical

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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