Room temperature operation of 8–12 μm InSbBi infrared photodetectors on GaAs substrates

1998 ◽  
Vol 73 (5) ◽  
pp. 602-604 ◽  
Author(s):  
J. J. Lee ◽  
J. D. Kim ◽  
M. Razeghi
Keyword(s):  
Room Temperature ◽  
Infrared Photodetectors ◽  
Gaas Substrates ◽  
Room Temperature Operation

Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range

2007 ◽  
Vol 22 (11) ◽  
pp. 1240-1244 ◽  
Author(s):  
Ben Sherliker ◽  
Matthew Halsall ◽  
Irmantas Kasalynas ◽  
Dalius Seliuta ◽  
Gintaras Valusis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Room Temperature ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Room Temperature Operation

Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 605-607 ◽  
Author(s):  
Tzer-En Nee ◽  
Nien-Tze Yeh ◽  
Po-Wen Shiao ◽  
Jen-Inn Chyi ◽  
Ching-Ting Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Gaas Substrates ◽  
Room Temperature Operation

Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates

1996 ◽  
Vol 35 (Part 2, No. 2A) ◽  
pp. L150-L153 ◽  
Author(s):  
Yoshihiko Hanamaki ◽  
Yoshiyuki Watanuki ◽  
Hidefumi Akiyama ◽  
Tetsuya Takeuchi ◽  
Nagaatsu Ogasawara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Cavity Surface ◽  
Gaas Substrates ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Room Temperature Operation

scholarly journals Room temperature operation of mid-infrared InAs081Sb019 based photovoltaic detectors with an In02Al08Sb barrier layer grown on GaAs substrates

2018 ◽  
Vol 26 (5) ◽  
pp. 6249 ◽  
Author(s):  
Dae-Myeong Geum ◽  
SangHyeon Kim ◽  
SooSeok Kang ◽  
Hosung Kim ◽  
Hwanyeol Park ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Room Temperature ◽  
Mid Infrared ◽  
Gaas Substrates ◽  
Photovoltaic Detectors ◽  
Room Temperature Operation

Room‐temperature operation of InTlSb infrared photodetectors on GaAs

1996 ◽  
Vol 69 (3) ◽  
pp. 343-344 ◽  
Author(s):  
J. D. Kim ◽  
E. Michel ◽  
S. Park ◽  
J. Xu ◽  
S. Javadpour ◽  
...  
Keyword(s):  
Room Temperature ◽  
Infrared Photodetectors ◽  
Room Temperature Operation
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