Room‐temperature operation of InTlSb infrared photodetectors on GaAs

1996 ◽  
Vol 69 (3) ◽  
pp. 343-344 ◽  
Author(s):  
J. D. Kim ◽  
E. Michel ◽  
S. Park ◽  
J. Xu ◽  
S. Javadpour ◽  
...  
Keyword(s):  
Room Temperature ◽  
Infrared Photodetectors ◽  
Room Temperature Operation

Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range

2007 ◽  
Vol 22 (11) ◽  
pp. 1240-1244 ◽  
Author(s):  
Ben Sherliker ◽  
Matthew Halsall ◽  
Irmantas Kasalynas ◽  
Dalius Seliuta ◽  
Gintaras Valusis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Room Temperature ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Room Temperature Operation

HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

2001 ◽  
Vol 30 (6) ◽  
pp. 711-716 ◽  
Author(s):  
S. Velicu ◽  
G. Badano ◽  
Y. Selamet ◽  
C. H. Grein ◽  
J. P. Faurie ◽  
...  
Keyword(s):  
Room Temperature ◽  
Infrared Photodetectors ◽  
Room Temperature Operation

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

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