Room temperature operation of type-II GaAsSb∕InGaAs quantum well laser on GaAs substrates

2002 ◽  
Vol 38 (12) ◽  
pp. 564 ◽  
Author(s):  
S.-W. Ryu ◽  
P.D. Dapkus
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Type Ii ◽  
Quantum Well Laser ◽  
Gaas Substrates ◽  
Ingaas Quantum Well ◽  
Room Temperature Operation

Room-temperature lasing of type-II "W" GaSb/GaAs quantum dots embedded in InGaAs quantum well

2007 ◽  
Author(s):  
J. Tatebayashi ◽  
A. Khoshakhlagh ◽  
G. Balakrishnan ◽  
S. H. Huang ◽  
M. Mehta ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Room Temperature ◽  
Type Ii ◽  
Ingaas Quantum Well

Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 2) ◽  
pp. L73-L75 ◽  
Author(s):  
Tadashi Saku ◽  
Hidetoshi Iwamura ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Well Laser ◽  
Multi Quantum Well ◽  
Room Temperature Operation
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