Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers

1998 ◽  
Vol 72 (24) ◽  
pp. 3160-3162 ◽  
Author(s):  
C. S. Peng ◽  
Z. Y. Zhao ◽  
H. Chen ◽  
J. H. Li ◽  
Y. K. Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Threading Dislocation ◽  
Dislocation Densities

Significance of a Nucleation Layer in Inhibiting Interfacial Pitting in InAs Films Grown by Two-Step MOVCD on (100) Inp Substrates

1993 ◽  
Vol 312 ◽  
Author(s):  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Substrate Surface ◽  
Threading Dislocation ◽  
High Electron ◽  
Nucleation Layer ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Temperature Deposition ◽  
Higher Temperature

AbstractIn this paper, we study the significance of a low temperature nucleation layer and its role in inhibiting interfacial pitting vapor deposition. Transmission electron microscopy and scanning electron microscopy studies show that severe interfacial pitting occurs for thin nucleation layers of average thicknesses of 200Å and 400Å. For these average nucleation layer thicknesses we have found that the InAs islands do not cover the entire substrate surface during the low temperature deposition. Hence, when the film is heated to a higher temperature for the growth of the remainder of the film severe pitting at the heterointerface is produced. The thermal etchpits are sources of threading dislocations, which propagate to the surface of the film. For thicker nucleation layers we observe no interfacial pitting. Our studies show that there is an optimum nucleation layer thickness for which high quality InAs films with reduced threading dislocation densities and relatively high electron mobilities are obtained. Both electrical and structural studies suggest that ∼ 800Å is an optimum thickness of the low temperature nucleation layer.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

1991 ◽  
Vol 59 (7) ◽  
pp. 811-813 ◽  
Author(s):  
E. A. Fitzgerald ◽  
Y.‐H. Xie ◽  
M. L. Green ◽  
D. Brasen ◽  
A. R. Kortan ◽  
...  
Keyword(s):  
Threading Dislocation ◽  
Si Substrates ◽  
Dislocation Densities

High Quality AlN Layer Grown on Patterned Sapphire Substrates by Hydride Vapor-Phase Epitaxy: A Route for Cost Efficient AlN Templates for Deep Ultraviolet Light Devices

2021 ◽  
Vol 21 (9) ◽  
pp. 4881-4885
Author(s):  
Seung-Jae Lee ◽  
Seong-Ran Jeon ◽  
Young Ho Song ◽  
Young-Jun Choi ◽  
Hae-Gon Oh ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Order Of Magnitude ◽  
Cost Efficient ◽  
Patterned Sapphire Substrates

We report the characteristics of AlN epilayers grown directly on cylindrical-patterned sapphire substrates (CPSS) by hydride vapor-phase epitaxy (HVPE). To evaluate the effect of CPSS, we analyzed the threading dislocation densities (TDDs) of AlN films grown simultaneously on CPSS and flat sapphire substrate (FSS) by transmission electron microscopy (TEM). The corresponding TDD is measured to be 5.69 x 108 cm−2 for the AlN sample grown on the CPSS that is almost an order of magnitude lower than the value of 3.43 × 109 cm−2 on the FSS. The CPSS contributes to reduce the TDs originated from the AlN/sapphire interface via bending the TDs by lateral growth during the coalescence process. In addition, the reduction of direct interface area between AlN and sapphire by CPSS reduce the generation of TDs.

Evaluation of threading dislocation densities in In- and N-face InN

2010 ◽  
Vol 107 (5) ◽  
pp. 053517 ◽  
Author(s):  
C. S. Gallinat ◽  
G. Koblmüller ◽  
Feng Wu ◽  
J. S. Speck
Keyword(s):  
Threading Dislocation ◽  
Dislocation Densities

High Voltage AlGaN/GaN Heterojunction Transistors

2004 ◽  
Vol 14 (01) ◽  
pp. 225-243 ◽  
Author(s):  
L. S. McCarthy ◽  
N-Q. Zhang ◽  
H. Xing ◽  
B. Moran ◽  
S. DenBaars ◽  
...  
Keyword(s):  
Drain Current ◽  
Gate Insulator ◽  
Threading Dislocation ◽  
High Electron ◽  
Resistive Load ◽  
Power Switching ◽  
Field Plate ◽  
Switching Power ◽  
Dislocation Densities ◽  
Extrinsic Base

The use of AlGaN / GaN HEMTs and HBTs for switching power supplies is explored. With its high electron velocities and breakdown fields, GaN has great potential for power switching. The field-plate HEMT increased breakdown voltages by 20% to 570V by reducing the peak field at the drain-side edge of the gate. The use of a gate insulator is also investigated, using both JVD SiO 2 and e-beam evaporated SiO 2 to reduce gate leakage, increasing breakdown voltages to 1050V and 1300V respectively. The power device figure of merit (FOM) for these devices: [Formula: see text], is the highest reported for switching devices. To reduce trapping effects, reactively sputtered SiN x, is used as a passivant, resulting in a switching time of less than 30 ns for devices blocking over 110V with a drain current of 1.4A under resistive load conditions. Dynamic load results are also presented. The development of HBTs for switching applications included the development of an etched emitter HBT with a selectively regrown extrinsic base. This was later improved upon with the selectively regrown emitter devices with current gains as high as 15. To improve breakdown in these devices, thick GaN layers were grown, reducing threading dislocation densities in the active layers. A further improvement included the use of a bevelled shallow etch and a lateral collector design to maximize device breakdown.

Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy

2013 ◽  
Vol 102 (5) ◽  
pp. 051916 ◽  
Author(s):  
Bernhard Loitsch ◽  
Fabian Schuster ◽  
Martin Stutzmann ◽  
Gregor Koblmüller
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Threading Dislocation ◽  
Dislocation Densities

Residual Strain and Defect Analysis in as Grown and Annealed SiGe Layers

1991 ◽  
Vol 220 ◽  
Author(s):  
A. R. Powell ◽  
R. A. Kubiak ◽  
T. E. Whall ◽  
E. H. C. Parker ◽  
D. K. Bowen
Keyword(s):  
Residual Strain ◽  
Buffer Layers ◽  
Limited Area ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
High Temperature Anneal ◽  
Dislocation Densities ◽  
Acceptable Quality ◽  
Strained Sige

ABSTRACTIn this paper we address the problem of producing SiGe buffer layers of acceptable quality for the growth of symmetrically strained SiGe structures. Initially we consider SiGe layers grown to well beyond the metastable critical thickness and examine the degree of residual strain both as - grown and post anneal. The defect levels in metastable SiGe layers following high temperature anneal were also studied. A buffer layer was grown consisting of stacked metastable SiGe layers each of which is annealed in situ prior to the growth of the next layer and terminating with a 0.45 SiGe alloy. This produces nearly fully relaxed 1.15pim thick structures with threading dislocation densities of 4 × 106cm−2. Limited area growth on Si suggests that elastically relaxed material free of both threading and misfit dislocations can be produced.

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