Near-field optical study of InGaN/GaN epitaxial layers and quantum wells

1998 ◽  
Vol 72 (21) ◽  
pp. 2645-2647 ◽  
Author(s):  
A. Vertikov ◽  
M. Kuball ◽  
A. V. Nurmikko ◽  
Y. Chen ◽  
S.-Y. Wang
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Epitaxial Layers ◽  
Optical Study

Near-field optical study of InGaN/GaN quantum wells

1998 ◽  
Author(s):  
A. Vertikov ◽  
M. Kuball ◽  
A.V. Nurmikko ◽  
Y. Chen ◽  
S.Y. Wang
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Optical Study

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Far-infrared magneto-optical study of two-dimensional electrons and holes in InAs/AlxGa1−xSb quantum wells

1997 ◽  
Vol 55 (3) ◽  
pp. 1617-1636 ◽  
Author(s):  
J. Kono ◽  
B. D. McCombe ◽  
J.-P. Cheng ◽  
I. Lo ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Two Dimensional ◽  
Optical Study

Optical Study of Bandedge Blue-Shift in AlGaN/GaN Double Quantum Wells

1997 ◽  
Vol 14 (9) ◽  
pp. 708-711
Author(s):  
Yang Kai ◽  
Shen Bo ◽  
Zhang Rong ◽  
Zhou Yu-gang ◽  
Chen Zhi-zhong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Blue Shift ◽  
Double Quantum ◽  
Optical Study

scholarly journals Properties of near-field photoluminescence in green emitting single and multiple semipolar (202¯1) plane InGaN/GaN quantum wells

2015 ◽  
Vol 6 (1) ◽  
pp. 39 ◽  
Author(s):  
Mounir D. Mensi ◽  
Daniel L. Becerra ◽  
Ruslan Ivanov ◽  
Saulius Marcinkevičius ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field

scholarly journals Optical study of good quality InGaP/GaAs quantum wells: Influence of the indium content around the lattice‐matched composition

1996 ◽  
Vol 68 (15) ◽  
pp. 2111-2113 ◽  
Author(s):  
Juan Martínez‐Pastor ◽  
Luisa González ◽  
Philippe Roussignol
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Optical Study ◽  
Lattice Matched

Multimode Scanning Near-Field Photoluminescence Spectroscopy of InGaN Quantum Wells

2018 ◽  
Author(s):  
Saulius Marcinkevicius ◽  
Mounir Mensi ◽  
Ruslan Ivanov ◽  
Leah Y. Kuritzky ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Photoluminescence Spectroscopy ◽  
Ingan Quantum Wells

Nonresonant radiative exciton transfer by near field between quantum wells

2013 ◽  
Vol 117 (5) ◽  
pp. 944-949 ◽  
Author(s):  
V. Ya. Aleshkin ◽  
L. V. Gavrilenko ◽  
D. M. Gaponova ◽  
A. M. Kadykov ◽  
V. G. Lysenko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Exciton Transfer
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